Comparison of surface damage under the dry and wet impact: Molecular dynamics simulation

Chen, Ruling; Liang, Min; Lei, Hong; Guo, Dan; Hu, Xiao

doi:10.1016/j.apsusc.2011.10.035

Cited by 27 publications

(20 citation statements)

References 21 publications

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“…They were referred to as the CN3 and CN5 atoms, respectively. According to previous studies [21,34], it was found that the volume of the damaged region corresponds to the volume of the deformation region when the number of CN5 atoms reaches a maximum. Therefore, the variance in the number of CN5 atoms is selected as a quantitative criterion for judging the degree of damage incurred by the crystalline silicon.…”

Section: Simulation Resultsmentioning

confidence: 99%

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Study on the influence of standoff distance on substrate damage under an abrasive water jet process by molecular dynamics simulation

Chen

Zhang

2017

Friction

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Abstract:The process of a cluster-containing water jet impinging on a monocrystalline silicon substrate was studied by molecular dynamics simulation. The results show that as the standoff distance increases, the jet will gradually diverge. As a result, the solidified water film between the cluster and the substrate becomes "thicker" and "looser". The "thicker" and "looser" water film will then consume more input energy to achieve complete solidification, resulting in the stress region and the high-pressure region of the silicon substrate under small standoff distances to be significantly larger than those under large standoff distances. Therefore, the degree of damage sustained by the substrate will first experience a small change and then decrease quickly as the standoff distance increases. In summary, the occurrence and maintenance of complete solidification of the confined water film between the cluster and the substrate plays a decisive role in the level of damage formation on the silicon substrate. These findings are helpful for exploring the mechanism of an abrasive water jet.

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Section: Simulation Resultsmentioning

confidence: 99%

“…Han and Gan studied the surface planarization of the rough silicon surface under the impact of multiple nanoparticles [20]. Chen et al studied the surface damage of the silicon surface covered by a water film [21] or silicon dioxide film [22] under silica cluster by MD simulations.…”

Section: Introductionmentioning

confidence: 99%

Study on the influence of standoff distance on substrate damage under an abrasive water jet process by molecular dynamics simulation

Chen

Zhang

2017

Friction

Self Cite

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“…Therefore, the particle-wafer interaction takes place in wet conditions. The surface damage in the wet condition was further simulated using the MD method for comparison with the dry condition [69,70]. The damage to the substrate after the dry impact is more severe than that after the wet impact under the same other conditions, and it is especially obvious for large incidence angles.…”

Section: Molecular Dynamics Simulation Of Cmp: Atomic Viewmentioning

confidence: 99%

Chemical mechanical polishing: Theory and experiment

Zhao

2013

Friction

164

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For several decades, chemical mechanical polishing (CMP) has been the most widely used planarization method in integrated circuits manufacturing. The final polishing results are affected by many factors related to the carrier structure, the polishing pad, the slurry, and the process parameters. As both chemical and mechanical actions affect the effectiveness of CMP, and these actions are themselves affected by many factors, the CMP mechanism is complex and has been a hot research area for many years. This review provides a basic description of the development, challenges, and key technologies associated with CMP. We summarize theoretical CMP models from the perspectives of kinematics, empirical, its mechanism (from the viewpoint of the atomic scale, particle scale, and wafer scale), and its chemical-mechanical synergy. Experimental approaches to the CMP mechanism of material removal and planarization are further discussed from the viewpoint of the particle wear effect, chemical-mechanical synergy, and wafer-pad interfacial interaction.

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“…The findings from the present study differ significantly from those of Rentsch et al [10], who also studied lubricated nanometric machining, but used a scenario in which the fluid was held at constant temperature in the simulation, whereas in our simulations only the bottom and lateral faces of the substrate were thermostated. Chen et al [11,12] also report high temperatures in chips formed in nanometric machining.…”

Section: Physical Modeling For Virtual Manufacturing Systems and Procmentioning

confidence: 99%

“…However, cooling and lubrication play a decesive role in machining and have a huge impact on the process and process results [8,9]. There are only a few molecular dynamics studies which consider the effect of lubricants on nanometric machining [1,[10][11][12][13][14]. Each of them focusses on the description of a certain substrate-fluid pair and usually no special attention is given to the influence of the substrate-fluid interaction, even though that interaction plays a predominant role in such processes [15,16].…”

Section: Introductionmentioning

confidence: 99%

Effects of Lubrication on the Friction in Nanometric Machining Processes: A Molecular Dynamics Approach

Lautenschlaeger

Stephan

Urbassek

et al. 2017

AMM

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Abstract. Physical phenomena in a nanometric machining process were studied by molecular dynamics simulations. A cylindrical tool was indented and then moved laterally on an initially flat workpiece. The focus of the study is on the effect of lubrication on the nanoscale. Therefore, the indentation and the scratching were studied both in vacuum and submersed in a lubricant. All materials were modeled by Lennard-Jones truncated and shifted potential sites. It is observed, that in the lubricated case, a substantial part of the cutting edge of the tool is in dry contact with the workpiece. Nevertheless, compared to the dry scenario, the lubrication lowers the coefficient of friction. However, the work which is needed for the indentation and the scratching is not reduced. The processed surface is found to be smoother in the lubricated case. As expected, the lubrication has an important influence on the temperature field observed in the simulation.

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Comparison of surface damage under the dry and wet impact: Molecular dynamics simulation

Cited by 27 publications

References 21 publications

Study on the influence of standoff distance on substrate damage under an abrasive water jet process by molecular dynamics simulation

Study on the influence of standoff distance on substrate damage under an abrasive water jet process by molecular dynamics simulation

Chemical mechanical polishing: Theory and experiment

Effects of Lubrication on the Friction in Nanometric Machining Processes: A Molecular Dynamics Approach

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