Comparison of the (2×2) reconstructions of GaAs{111} surfaces

Polarity controlled InAs{111} films grown on Si(111)

“…Such characteristic features are quite similar to those observed for the As trimer structure on the ͑111͒B surfaces of InAs ͑Ref. 25͒ and GaAs: 7,9 three As atoms in the trimer manifest themselves as a single protrusion.…”

Ab initio-based approach to structural change of compound semiconductor surfaces during MBE growth

“…This indicates that the (2 Â 2) surface with As-trimer is stable at temperature less than $800-1000 K whereas that without As-trimer is stabilized at higher temperatures. The stable temperature range of the (2 Â 2) surface with As-trimer agree well with experimental results (shaded area in this figure) [16,[31][32][33]. Considering the fact that the stable temperature range less than $800-1000 K corresponds to MBE growth temperature range, excess As-trimer tends to prevent layer-by-layer growth of GaAs on the (2 Â 2) surface.…”

Analysis of GaSb and AlSb reconstructions on GaSb(111)A- andB-oriented surfaces by azimuthal-scan reflection high-energy electron diffraction

“…The surfaces of III-V compound semiconductors have been studied by various experimental methods such as x-ray diffraction (XRD), 5 scanning tunneling microscopy (STM), 6,7 photoemission spectroscopy (PES), [8][9][10] transmission electron diffraction (TED), 11 and low-energy electron diffraction (LEED). The majority of these efforts focused on the analysis of surface structures on (001) substrates, [12][13][14][15][16][17] the reconstruction phase diagrams, 18,19 and the understanding of their growth kinetics.…”