Comparison of the chemical erosion of Si, C and SiC under deuterium ion bombardment

Balden, M.; Roth, J.

doi:10.1016/s0022-3115(00)00032-5

Cited by 24 publications

(17 citation statements)

References 24 publications

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“…The relative substrate temperature independence of the chemical sputtering mechanism reported by Balden and Roth 16 and Roth 15 for chemical sputtering of hydrogenated carbon matches our experimental results. In our P rf series (Section IV A), the net deposition rate is only reduced by 26% when the substrate temperature is lowered from 130 C to room temperature at P rf ¼ 114 mW cm…”

Section: à2supporting

confidence: 90%

“…A study by Balden and Roth 16 on c-Si etching with monoenergetic D 3 þ ion beams for T s ranging from 25 C to 827 C revealed that the etch yield for c-Si by a 20 eV D 3 þ beam has a pronounced maximum around 130 C, being 0.015 Si atom per impinging D 3 þ ion. This temperature maximum in the yield has not been reported for atomic H produced with a tungsten filament.…”

Section: à2mentioning

confidence: 99%

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Chemical sputtering by H2+ and H3+ ions during silicon deposition

Landheer

Goedheer

Poulios

et al. 2016

Journal of Applied Physics

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We investigated chemical sputtering of silicon films by H y þ ions (with y being 2 and 3) in an asymmetric VHF Plasma Enhanced Chemical Vapor Deposition (PECVD) discharge in detail. In experiments with discharges created with pure H 2 inlet flows, we observed that more Si was etched from the powered than from the grounded electrode, and this resulted in a net deposition on the grounded electrode. With experimental input data from a power density series of discharges with pure H 2 inlet flows, we were able to model this process with a chemical sputtering mechanism. The obtained chemical sputtering yields were (0.3-0.4) 6 0

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Section: à2supporting

confidence: 90%

Section: à2mentioning

confidence: 99%

Chemical sputtering by H2+ and H3+ ions during silicon deposition

Landheer

Goedheer

Poulios

et al. 2016

Journal of Applied Physics

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“…However, it seems that this structure change does not largely influence the hydrogen trapping site because D desorption stages for He + implanted SiC was the same as that for pure SiC and only D trapping efficiency and its behavior were changed. These disordered C produced by the ion implantation would migrate and desorbed as hydrocarbons form [8], which is consistent with the previous report that only hydrocarbon was desorbed from SiC after D þ 2 implantation and no silane was formed [14,15].…”

Section: Resultssupporting

confidence: 92%

“…In our previous study [7] and other reports [13,14], the TDS spectrum of D 2 for pure SiC consists of two desorption stages at the temperature of 800 K and 1000 K, which corresponds to the desorption of D bound to Si and C, respectively. Fig.…”

Section: Resultsmentioning

confidence: 78%

Effects of helium implantation on hydrogen isotope retention behavior in SiC

Oya

Miyauchi

Suda

et al. 2007

Journal of Nuclear Materials

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“…This indicates that hydrocarbon was formed and desorbed from SiC, which is consistent with previous report that only methane is desorbed from SiC, although silane is not formed. [17][18][19] Therefore, some deuterium would be desorbed with forming hydrocarbons and the rest would be bound to C atoms to form a C-D bond in SiC. Carbon vacancies were introduced and Si with dangling bonds remained in SiC.…”

Section: Discussionmentioning

confidence: 99%

Trapping and Detrapping Mechanisms of Deuterium in SiC Studied by XPS and TDS Techniques

et al. 2005

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The elucidation of the trapping and detrapping mechanisms of hydrogen isotopes in SiC is one of the most critical issues for future fusion reactors if SiC is used as the first wall and structure material. In this study, 1 keV deuterium (D 2 þ ) ions were implanted into SiC and the chemical states of C and Si were evaluated by X-ray photoelectron spectroscopy (XPS). The deuterium desorption and retention were also analyzed by thermal desorption spectroscopy (TDS). The deuterium desorption behavior for SiC was compared to that for Si and graphite, and it was found that deuterium is preferentially trapped by C and, after the saturation of the C-D bond, it is trapped by Si in SiC. Deuterium desorption was found to consist of two stages, namely deuterium desorptions bound to Si and C. Their trapping mechanisms were influenced by the damaged structures produced by the D 2 þ ion implantation. Finally, deuterium retention in SiC at temperatures above 700 K was higher than that in graphite, indicating that tritium retention in SiC may be high compared to that in graphite during plasma operation.

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Comparison of the chemical erosion of Si, C and SiC under deuterium ion bombardment

Cited by 24 publications

References 24 publications

Chemical sputtering by H2+ and H3+ ions during silicon deposition

Chemical sputtering by H2+ and H3+ ions during silicon deposition

Effects of helium implantation on hydrogen isotope retention behavior in SiC

Trapping and Detrapping Mechanisms of Deuterium in SiC Studied by XPS and TDS Techniques

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