2019
DOI: 10.1007/s11432-018-9554-4
|View full text |Cite
|
Sign up to set email alerts
|

Comparison of the dark signal degradation induced by Gamma ray, proton, and neutron radiation in pinned photodiode CMOS image sensors

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
1

Citation Types

0
1
0

Year Published

2022
2022
2024
2024

Publication Types

Select...
4

Relationship

0
4

Authors

Journals

citations
Cited by 4 publications
(1 citation statement)
references
References 9 publications
0
1
0
Order By: Relevance
“…In this process, the secondary electrons are small in extent and low in energy, but they are also a cause of noise generation. When the secondary electrons replace the original electrons in the image element, this will cause transient pulse currents that will macroscopically manifest as bright spots on the image [ 3 ]. If the radiation causes lattice defects or displacement damage to the sensor, resulting in degradation of its function, the corresponding image element will work abnormally and produce temporary or permanent abnormal output in the subsequent image [ 4 ].…”
Section: Introductionmentioning
confidence: 99%
“…In this process, the secondary electrons are small in extent and low in energy, but they are also a cause of noise generation. When the secondary electrons replace the original electrons in the image element, this will cause transient pulse currents that will macroscopically manifest as bright spots on the image [ 3 ]. If the radiation causes lattice defects or displacement damage to the sensor, resulting in degradation of its function, the corresponding image element will work abnormally and produce temporary or permanent abnormal output in the subsequent image [ 4 ].…”
Section: Introductionmentioning
confidence: 99%