Abstract:Obtaining a high coefficient of efficiency for a power converter requires that the components used to build it are well chosen. Power semiconductor switches are responsible for significant power loss. For the same breakdown voltage, a silicon carbide (SiC) bipolar device has a significantly thinner, lightly doped drift region (n- base) compared to silicon (Si) devices and, therefore, low switching losses and low voltage drops in the drift region. The forward voltage drop of a bipolar device is the sum of the … Show more
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