Comparison of the MOS capacitor hydrogen sensors with different SiO2 film thicknesses and a Ni-gate film in a 4% hydrogen–nitrogen mixture

Aval, Leila Fekri; Elahi, Seyed Mohammad; Darabi, Elham; Sebt, S. A.

doi:10.1016/j.snb.2015.04.039

Cited by 20 publications

(3 citation statements)

References 28 publications

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“…Also, it has been reported that the barrier height changes depending on the thickness of existing SiO 2 or electrical characteristics change significantly, which affects device characteristics. Therefore, we tried to determine the effect of SiO 2 according to the SiO 2 buffer layer thickness. , In this study, to confirm the effect of the oxygen density of the SiO 2 layer by thickness on the dipole and flat-band voltage, the difference in the interfacial dipole according to the SiO 2 thickness under the same SiO 2 formation condition (PE-CVD) and the corresponding electrical characteristic change were confirmed. To check the oxygen density change, the electrical defects of suboxide at the SiO 2 /Si interface and the TiN/Al 2 O 3 /SiO 2 / p -Si structure were first checked through X-ray photoelectron spectroscopy (XPS) and capacitance–voltage ( C–V ).…”

Section: Introductionmentioning

confidence: 97%

Dipole Formation and Electrical Properties According to SiO₂ Layer Thickness at an Al₂O₃/SiO₂ Interface

et al. 2021

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Interfacial and electrical properties of Al 2 O 3 /SiO 2 /Si were analyzed to determine the change in interfacial defects and suboxide density according to the thickness of the SiO 2 layer and to determine the effect on dipole and flat-band voltage. As the thickness of the SiO 2 layer increased (5/7/10 nm), the density of the suboxide present at the interface (2.23/3.23/4.73 × 10 14 atoms/cm 2 ) also increased, respectively. In addition, the slow state density, fixed oxide charge density, and interface state density calculated through the capacitance−voltage (C−V) curve all differ depending on the thickness of the SiO 2 layer and are further reduced by postmetallization annealing (PMA). The flat-band voltages (V FB ) of the SiO 2 /Si sample with thicknesses of 5, 7, and 10 nm before PMA are −1.27, −1.32, and −2.20 V, respectively, and further decreased after PMA (−0.64, −0.80, and −1.74 V). Consequently, it was demonstrated that there was a difference in interfacial defects and suboxides according to the thickness. In addition, it was confirmed that when the interfacial defects and suboxides were reduced, the oxide charge state density and oxygen diffusion decreased, and thus the dipole layer strength and V FB shift decreased.

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Section: Introductionmentioning

confidence: 97%

Dipole Formation and Electrical Properties According to SiO₂ Layer Thickness at an Al₂O₃/SiO₂ Interface

et al. 2021

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“…This is due to the relative simplicity of the fabrication process, together with their high sensitivity and signal amplification capability. Starting from the standard capacitor structure: catalytic metal gate-silicon dioxide-silicon carbide (MOSiC) [10], the technological processes were continually adjusted for better-quality structures, notable progress in sensing qualities being reported [11][12][13]. Despite their well-known drawbacks, the most used catalytic gate metal remains Pd [8] and Pt [14], while the most research effort is concentrated on the improving the oxide characteristics.…”

Section: Introductionmentioning

confidence: 99%

A new 4H-SiC hydrogen sensor with oxide ramp termination

Pascu

Kusko

Crǎciunoiu

et al. 2016

Materials Science in Semiconductor Processing

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“…Comparison of C-V curves of ideal and real Pd MOS capacitor layer becomes stronger by an increase in the hydrogen atoms at the interface. The response of the nanosensor is obtained from[21][22][23][24][25][26] …”

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confidence: 99%

Monitoring of hydrogen concentration using capacitive nanosensor in a 1% H ₂ –N ₂ mixture

Pour

Aval

2018

Micro & Nano Letters

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In this work, a hydrogen capacitor nanosensor with palladium nanoparticles (PdNPs) electrode based on metal-oxide-semiconductor structure has been fabricated. The capacitor sensor has been fabricated on the n-type silicon substrate with an oxide film thickness of 50 nm. PdNPs are synthesised and then deposited on the oxide surface using spin coating. PdNPs are characterised using by transmission electron microscope and UV spectrum. Also, the morphology of the oxide surface is characterised using by atomic force microscope. The response time and recovery time of nanosensor have been explained at the room temperature. The time interval to 90% of the signal value for 1% H 2-N 2 mixture was 1.4 s and recovery time was 14 s. The curve of pressure as a function of hydrogen concentration (H/Pd) in the PdNPs and the mechanism of the nanosensor are reported. The capacitor nanosensor based on nanoparticles shows sensitive and fast response.

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Comparison of the MOS capacitor hydrogen sensors with different SiO2 film thicknesses and a Ni-gate film in a 4% hydrogen–nitrogen mixture

Cited by 20 publications

References 28 publications

Dipole Formation and Electrical Properties According to SiO₂ Layer Thickness at an Al₂O₃/SiO₂ Interface

Dipole Formation and Electrical Properties According to SiO₂ Layer Thickness at an Al₂O₃/SiO₂ Interface

A new 4H-SiC hydrogen sensor with oxide ramp termination

Monitoring of hydrogen concentration using capacitive nanosensor in a 1% H ₂ –N ₂ mixture

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Comparison of the MOS capacitor hydrogen sensors with different SiO2 film thicknesses and a Ni-gate film in a 4% hydrogen–nitrogen mixture

Cited by 20 publications

References 28 publications

Dipole Formation and Electrical Properties According to SiO2 Layer Thickness at an Al2O3/SiO2 Interface

Dipole Formation and Electrical Properties According to SiO2 Layer Thickness at an Al2O3/SiO2 Interface

A new 4H-SiC hydrogen sensor with oxide ramp termination

Monitoring of hydrogen concentration using capacitive nanosensor in a 1% H 2 –N 2 mixture

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Product

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Dipole Formation and Electrical Properties According to SiO₂ Layer Thickness at an Al₂O₃/SiO₂ Interface

Dipole Formation and Electrical Properties According to SiO₂ Layer Thickness at an Al₂O₃/SiO₂ Interface

Monitoring of hydrogen concentration using capacitive nanosensor in a 1% H ₂ –N ₂ mixture