Comparison of the responsivity of W-Ni point contact MBM diodes with W-Si point contact Schottky diodes

Antenna-coupled point contact n-Ge/tungsten Schottky diodes have been used to detect CO2 laser radiation, and a very clear antenna pattern is obtained for an electric field polarized in the plane of incidence. The polarity of the detected voltage of the diode at low frequency and CO2 laser frequency regions indicates that the nonlinear I-V characteristic of the diode at low frequency persists up to the CO2 laser frequency.

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Characteristics of Schottky diodes at 10.6 μm

Inoue

Harakawa

Yasuoka

1983

Applied Physics Letters

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An Antenna-Coupled Warm Carrier Device Using Polycrystalline Ge Films

Inoue

Yasuoka

1988

Jpn. J. Appl. Phys.

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Extended x-ray absorption fine-structure (EXAFS) studies have been performed, in transmission mode, on Cu,,Zn,,Al,, brass using the synchrotron radiation facility at Laboratoire d'utilisation du Rayonnement ElectromagnCtique. The spectra have been recorded at the Cu K and Zn K edges for different temperatures around the martensitic transformation temperature domain. The study of the temperature dependence of the Cu and Zn surroundings provides two main pieces of information.(i) The pure Cu sublattice deviates from the virtual crystal and absorbs the local stresses owing to thedifferent sizesofthe Zn, Cu and Alatomswhichconstitute thesecondsublattice; this behaviour is similar to that of ternary semiconducting random solid solutions such as In,Ga, _,As or Cd,Hgl -,Te.(ii) Zn and Cu neighbour environments evolve differently as the martensitic transformation takes place. In particular, around the Zn atoms, a lengthening of the atomic distances is observed only for premartensitic domain temperatures. The Cu K spectra evolve more gradually and an increase in the nearest-neighbour distances is observed during the whole transformation.

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Improvement of Responsivity of Antenna-Coupled Warm Carrier Device Using Polycrystalline Ge Thin Films

Uchida

Shimizu

Yasuoka

1996

Jpn. J. Appl. Phys.

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Electrical properties of Ge thin films evaporated on Si3N4 substrates were improved by introducing a heat treatment after the deposition. The Hall mobility of the deposited films increased with increasing heat-treatment temperature and was 280 cm2/V·s for a hole concentration of 6×1017 cm-3 at a heat-treatment temperature of 900° C. This value of the Hall mobility was about three times larger than that obtained for Ge films without heat treatment. A point-contact warm carrier device was also fabricated using evaporated Ge film with heat treatment, and the detected voltage induced by CO2 laser radiation was measured. The fabricated device operated as an antenna-coupled device and the detected voltage was about ten times higher than that obtained using a device without heat treatment.

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Comparison of the responsivity of W-Ni point contact MBM diodes with W-Si point contact Schottky diodes

Cited by 4 publications

References 20 publications

Characteristics of Schottky diodes at 10.6 μm

Characteristics of Schottky diodes at 10.6 μm

An Antenna-Coupled Warm Carrier Device Using Polycrystalline Ge Films

Improvement of Responsivity of Antenna-Coupled Warm Carrier Device Using Polycrystalline Ge Thin Films

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