Comparison of the Switching Energy Losses in Cascode and Enhancement-Mode GaN HEMTs

Vukić, Vladimir Dj.; Mrvić, Jovan; Katić, Vladimir

doi:10.1109/pee.2019.8923198

Cited by 4 publications

(3 citation statements)

References 4 publications

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“…Since the switching losses, Eon and Eoff, depend upon the of power devices and current, for the GaN used in this paper, the switching losses under different turn on/off current are calculated by (7). Eon and Eoff for the used GaN are shown in [33] which are two curves, respectively. Based upon these two curves [33], the curve-fitting results for Transphorm GaN are shown in ( 22) and ( 23), respectively.…”

Section: B Derive Switching Losses Of Ganmentioning

confidence: 99%

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Optimal Inductor Design Method for GaN-Based PFC

Huang,

Lai

2023

IEEE Access

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The main theme of this paper is to propose an optimal inductor design method for GaN-based PFC. The proposed method is developed based upon the minimization of PFC total losses, which include copper losses, core losses and switching losses of power devices. A systematic design flow chart is proposed to give the optimal turn number and stack number subject to the window area of core and minimization of PFC total losses. The proposed optimization design method is confirmed by analysis results first and then simulation results using ANSYS ® . The designed optimized inductor is applied to a GaN-based 1.5 kW Totempole PFC for server power and the experimental results show the peak efficiency goes up to 97.5% and 99%, under 115V and 264V of input voltage, respectively. The results fully support the effectiveness of the proposed optimization design method.INDEX TERMS Totem pole PFC, inductor design, core losses, copper losses, switching losses

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Section: B Derive Switching Losses Of Ganmentioning

confidence: 99%

“…Eon and Eoff for the used GaN are shown in [33] which are two curves, respectively. Based upon these two curves [33], the curve-fitting results for Transphorm GaN are shown in ( 22) and ( 23), respectively. The switching losses are therefore calculated by (7) as Imin = iS,ON and Imax = iS,OFF are given.…”

Section: B Derive Switching Losses Of Ganmentioning

confidence: 99%

Optimal Inductor Design Method for GaN-Based PFC

Huang,

Lai

2023

IEEE Access

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“…Various methods have been explored to realize normallyoff devices, including the use of P-GaN caps [7]- [10], recessed gates [11]- [13], fluorine ion injection [14] [15], and cascode structures [16]. However, enhanced HEMTs often suffer from significant parasitic capacitance, adversely affecting their frequency characteristics [17].…”

Section: Introductionmentioning

confidence: 99%

Enhancement-Mode HEMT Performance and Mitigating Delay Through Double-Heterojunction With Connect Channel Utilization for Trap Effect Reduction

Yang,

Sun,

et al. 2023

IEEE Access

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This paper presents a GaN-based High Electron Mobility Transistor (HEMT) with a connected dual-channel structure (CDC-HEMT). Specifically, the Al0.05Ga0.95N layer beneath the first channel enables the second channel to be in a non-conducting state while simultaneously increasing the number of electrons available in the conducting state. In contrast to conventional normally-off devices, the CDC-HEMT exhibits excellent DC performance, with a saturation current density increase from 0.67 A/mm to 1.52 A/mm at Vds=10 V and a maximum transconductance increase from 0.30 S to 0.62 S, which is twice as much. Furthermore, the optimal transconductance interval is widened by 1 V. The RF performance of the devices also demonstrates remarkable performance, with a current gain cut-off frequency of 31.8 GHz and a maximum oscillation frequency of 77 GHz. Under square wave testing, the transistors exhibit extremely low delay. The exceptional findings showcased in this study provide compelling evidence that the CDC-HEMT structure is a highly promising technique for utilizing GaN-based HEMTs with superior performance in power switching and microwave applications.INDEX TERMS connect-dual-channel, double heterojunction, GaN normally-off HEMT, trap offset, P-GaN gate.

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A Detailed Experimental Switching Transient Performance Comparison of Normally-off GaN HEMTs

Mandal,

et al. 2024

2024 IEEE International Communications Energy Conference (INTELEC)

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Comparison of the Switching Energy Losses in Cascode and Enhancement-Mode GaN HEMTs

Cited by 4 publications

References 4 publications

Optimal Inductor Design Method for GaN-Based PFC

Optimal Inductor Design Method for GaN-Based PFC

Enhancement-Mode HEMT Performance and Mitigating Delay Through Double-Heterojunction With Connect Channel Utilization for Trap Effect Reduction

A Detailed Experimental Switching Transient Performance Comparison of Normally-off GaN HEMTs

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