Plasmonics: Design, Materials, Fabrication, Characterization, and Applications XV 2017
DOI: 10.1117/12.2273941
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Comparison of the ultrafast hot electron dynamics of titanium nitride and gold for plasmonic applications

Abstract: With similar optical properties to gold and high thermal stability, titanium nitride continues to prove itself as a promising plasmonic material for high-temperature applications in the visible and near-infrared. In this work, we use transient pump probe differential reflection measurements to compare the electron energy decay channels in titanium nitride and gold thin films. Using an extended two temperature model to incorporate the photoexcited electrons, it is possible to separate the electron-electron and … Show more

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Cited by 4 publications
(12 citation statements)
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“…For semiconductors this is directly proportional to the free carrier density 29 ( ;< ). As we reported previously 8 , the differential signature of titanium oxynitride is dominated by the excited electrons in the conduction band of the TiO2x semiconducting oxide layer. Thus, the differential reflectivity is a straightforward parameter for comparing electron harvesting efficiencies between samples and geometries.…”
Section: Resultssupporting
confidence: 73%
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“…For semiconductors this is directly proportional to the free carrier density 29 ( ;< ). As we reported previously 8 , the differential signature of titanium oxynitride is dominated by the excited electrons in the conduction band of the TiO2x semiconducting oxide layer. Thus, the differential reflectivity is a straightforward parameter for comparing electron harvesting efficiencies between samples and geometries.…”
Section: Resultssupporting
confidence: 73%
“…As shown in our previous work 8 , the surface oxide (semiconducting TiO2x) plays a determining role in the electron dynamics as it can harvest the photoexcited electrons in the underlying TiN layer and delay recombination for nanoseconds timescales. Following the patterning process, a surface oxide forms on the sidewalls of the TiN strips in addition to the top surface as shown schematically in Figure 1c.…”
Section: Methodsmentioning
confidence: 81%
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“…Real (a) and imaginary (b) spectroscopic ellipsometry data for TiN films deposited via HIPIMS onto glass and Si substrates. Figures include a comparison to literature values for TiN films. , (c) Figure of merit (−ε′/ε′′) (FOM) comparison of TiN thin films and literature data. References ,, and are deposited via RF magnetron sputtering at 850 °C, 600 °C, and RT, respectively.…”
Section: Resultsmentioning
confidence: 99%