Comparison of the vacuum-ultraviolet radiation response of HfO2∕SiO2∕Si dielectric stacks with SiO2∕Si

Upadhyaya, G. S.; Shohet, J. L.

doi:10.1063/1.2591371

Cited by 14 publications

(9 citation statements)

References 18 publications

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“…Plasma-induced defect creation has been studied in great detail for the plasma processing of SiO 2 -based gate stacks 299,300,[346][347][348][349] and the influence of VUV exposure has also recently been studied for the high-k oxide HfO 2 . 299,300,344,[350][351][352] However, this damage mechanism has not really been highlighted for plasma-assisted ALD processes, for example, during the synthesis of metal oxides by plasma-assisted ALD itself or when depositing other materials (such as electrode materials) on top of high-k oxides by plasma-assisted ALD. Note that, apart from the fact that the metal oxide film might itself be affected, the interfacial SiO x layer, which is typically present (either unintentionally or prepared on purpose) between the metal oxide and the Si substrate, can also be affected.…”

Section: Challenges Of Plasma-assisted Aldmentioning

confidence: 99%

Plasma-Assisted Atomic Layer Deposition: Basics, Opportunities, and Challenges

Profijt

Potts

Sanden

et al. 2011

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

741

537

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Plasma-assisted atomic layer deposition (ALD) is an energy-enhanced method for the synthesis of ultra-thin films with Å-level resolution in which a plasma is employed during one step of the cyclic deposition process. The use of plasma species as reactants allows for more freedom in processing conditions and for a wider range of material properties compared with the conventional thermally-driven ALD method. Due to the continuous miniaturization in the microelectronics industry and the increasing relevance of ultra-thin films in many other applications, the deposition method has rapidly gained popularity in recent years, as is apparent from the increased number of articles published on the topic and plasma-assisted ALD reactors installed. To address the main differences between plasma-assisted ALD and thermal ALD, some basic aspects related to processing plasmas are presented in this review article. The plasma species and their role in the surface chemistry are addressed and different equipment configurations, including radical-enhanced ALD, direct plasma ALD, and remote plasma ALD, are described. The benefits and challenges provided by the use of a plasma step are presented and it is shown that the use of a plasma leads to a wider choice in material properties, substrate temperature, choice of precursors, and processing conditions, but that the processing can also be compromised by reduced film conformality and plasma damage. Finally, several reported emerging applications of plasma-assisted ALD are reviewed. It is expected that the merits offered by plasma-assisted ALD will further increase the interest of equipment manufacturers for developing industrial-scale deposition configurations such that the method will find its use in several manufacturing applications.

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Section: Challenges Of Plasma-assisted Aldmentioning

confidence: 99%

Plasma-Assisted Atomic Layer Deposition: Basics, Opportunities, and Challenges

Profijt

Potts

Sanden

et al. 2011

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

741

537

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“…[10][11][12][13][14][15] To investigate the influence of VUV photons on the material properties of films prepared by ALD, a number of plasma exposure experiments were conducted in the FlexAL reactor. During the experiments the minority charge carrier lifetime of c-Si wafers passivated by Al 2 O 3 was monitored using a Sinton WCT-100 tool.…”

Section: à3mentioning

confidence: 99%

Ion and Photon Surface Interaction during Remote Plasma ALD of Metal Oxides

Profijt

Kudlacek

Sanden

et al. 2011

J. Electrochem. Soc.

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The influence of ions and photons during remote plasma atomic layer deposition (ALD) of metal oxide thin films was investigated for different O 2 gas pressures and plasma powers. The ions have kinetic energies of 35 eV and fluxes of $10 12 -10 14 cm À2 s À1 toward the substrate surface: low enough to prevent substantial ion-induced film damage, but sufficiently large to potentially stimulate the ALD surface reactions. It is further demonstrated that 9.5 eV vacuum ultraviolet photons, present in the plasma, can degrade the electrical performance of electronic structures with ALD synthesized metal oxide films.

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“…In addition, depending on their energy, some of the photoinjected electrons can be photoemitted from the dielectric. 7 However, the amount of charge in the dielectric is unchanged as the photoemitted electrons were photoinjected from Si. Thus there will no effect on characteristics of the dielectric due to photoemission of the photoinjected electrons.…”

Section: Effect Of Vacuum Ultraviolet and Ultraviolet Irradiation On mentioning

confidence: 99%

Effect of vacuum ultraviolet and ultraviolet Irradiation on capacitance-voltage characteristics of low-k-porous organosilicate dielectrics

Sinha

Lauer

Nichols

et al. 2010

Applied Physics Letters

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High frequency capacitance-voltage (C-V) measurements are used to determine the effects of vacuum ultraviolet (VUV) and ultraviolet (UV) irradiation on defect states in porous low-k organosilicate (SiCOH) dielectrics. The characteristics show that VUV photons depopulate trapped electrons from defect states within the dielectric creating trapped positive charge. This is evidenced by a negative shift in the flat-band voltage of the C-V characteristic. UV irradiation reverses this effect by repopulating the defect states with electrons photoinjected from the silicon substrate. Thus, UV reduces the number of trapped positive charges in the dielectric and can effectively repair processing-induced damage.

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Comparison of the vacuum-ultraviolet radiation response of HfO2∕SiO2∕Si dielectric stacks with SiO2∕Si

Cited by 14 publications

References 18 publications

Plasma-Assisted Atomic Layer Deposition: Basics, Opportunities, and Challenges

Plasma-Assisted Atomic Layer Deposition: Basics, Opportunities, and Challenges

Ion and Photon Surface Interaction during Remote Plasma ALD of Metal Oxides

Effect of vacuum ultraviolet and ultraviolet Irradiation on capacitance-voltage characteristics of low-k-porous organosilicate dielectrics

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