Comparison of the Values of Solar Cell Contact Resistivity Measured with the Transmission Line Method (TLM) and the Potential Difference (PD)

Abstract

This work presents a comparison of values of the contact resistivity of silicon solar cells obtained using the following methods: the transmission line model method (TLM) and the potential difference method (PD). Investigations were performed with two independent scientific units. The samples were manufactured with silver front electrodes. The co-firing process was performed in an infrared belt furnace in a temperature range of 840 to 960 °C. The electrical properties of a batch of solar cells fabricated in two cycles were investigated. This work focuses on the different metallisation temperatures of co-firing solar cells and measurements were carried out using the methods mentioned. In the TLM and PD methods, the same calculation formulae were used. Moreover, solar cell parameters measured with these methods had the same, similar, or sometimes different but strongly correlated values. Based on an analysis of the selected databases, this article diagnoses the recent and current state of knowledge regarding the employment of the TLM and PD methods and the available hardware base. These methods are of interest to various research centres, groups of specialists dealing with the optimisation of the electrical properties of silicon photovoltaic cells, and designers of measuring instruments.

Study of fluorine-doped tin oxide thin films deposited by pneumatic spray pyrolysis and ultrasonic spray pyrolysis: a direct comparison

“…Then resistivity of the films decreases with an increase in thickness due to an increase in the carrier concentration in the films. Additionally, according to [41,42] various factors can cause resistance variation, including substrate roughness, the composition and thickness of the silver paste used for electrode deposition, deposition temperature and pressure, surface cleaning and preparation, and the presence of impurities or defects in the substrate. As well, it is possible to find chemical, morphological, and structural modifications in the deposit of films, if there is a variation in deposition temperature because new compounds can be formed, at the time of making the deposit, such as HF or other tin oxide phases (SnO, SnO 3 ) [3].…”

Experimental Investigation of Effect of Flake Silver Powder Content on Sintering Structure and Properties of Front Silver Paste of Silicon Solar Cell

“…The solder tape was first soaked in flux for 10 min, and, finally, the adhesion between the sintered silicon substrate and the silver film was tested by using a tensile machine. The ohmic contact resistivity between the silicon substrate and the silver film was measured using the rectangular transmission line method (TLM) as shown in Figure 3 [ 22 , 23 ].…”