Comparison of Thermal Stress during Short-Circuit in Different Types of 1.2 kV SiC Transistors Based on Experiments and Simulations

Sadik, Diane-Perle; Lim, Jang‐Kwon; Colmenares, Juan Carlos; Bakowski, Mietek; Nee, Hans‐Peter

doi:10.4028/www.scientific.net/msf.897.595

MSF

2017

DOI: 10.4028/www.scientific.net/msf.897.595

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Comparison of Thermal Stress during Short-Circuit in Different Types of 1.2 kV SiC Transistors Based on Experiments and Simulations

Diane-Perle Sadik

Jang‐Kwon Lim²,

Juan Carlos Colmenares

et al.

Abstract: Abstract.The temperature evolution during a short-circuit in the die of three different Silicon Carbide 1200-V power devices is presented. A transient thermal simulation was performed based on the reconstructed structure of commercially available devices. The location of the hottest point in the device is compared. Finally, the analysis supports the necessity to turn-off short-circuit events rapidly in order to protect the device immunity after a fault.

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Cited by 3 publications

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A universal automatic and self‐powered gate driver power supply for normally‐ON SiC JFETs

Giannakis

Peftitsis

2021

IET Power Electronics

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Normally-ON silicon carbide junction-field-effect transistors have a simple design and exhibit advantageous performance in terms of losses, elevated junction temperatures and high switching frequencies. However, under a loss of power to their gate, normally-ON junction-field-effect transistors are subject to a shoot-through situation, which might be severe for their survivability. This paper presents a universal concept for an automatic and self-powered gate driver power supply circuit for normally-ON silicon carbide junctionfield-effect transistors employed in high input-impedance circuits. The power to the gate is supplied during start-up and steady-state operations through a mutually coupled inductor with the high input impedance inductor and by employing a typical low-voltage, power supply circuit. The performance of the proposed automatic and self-powered gate driver was evaluated on a DC/DC boost converter rated at 6 kW, as well as in a low-voltage solidstate DC circuit breaker. From experiments it is shown that using the proposed circuit, the start-up process requires approximately 350 s, while the steady-state switching process of the junction-field-effect transistor during steady-state is also shown. Using the proposed circuit in a low-voltage solid-state DC breaker, a fault current of 68 A is cleared within 155 s.

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A universal automatic and self‐powered gate driver power supply for normally‐ON SiC JFETs

Giannakis

Peftitsis

2021

IET Power Electronics

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show abstract

Comparison of Thermal Stress During Short-Circuit in Different Types of 1.2-kV SiC Transistors Based on Experiments and Simulations

Sadik

Colmenares

Lim

et al. 2021

IEEE Trans. Ind. Electron.

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The temperature evolution during a short-circuit in the die of three different Silicon Carbide 1200-V power devices is presented. A transient thermal simulation was performed based on the reconstructed structure of commercially available devices. The location of the hottest point in the device is compared. Finally, the analysis supports the necessity to turn-off short-circuit events rapidly in order to protect the device immunity after a fault.

show abstract

Enablers for Overcurrent Capability of Silicon-Carbide-Based Power Converters: An Overview

Bhadoria

Dijkhuizen

Raj

et al. 2023

IEEE Trans. Power Electron.

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With the increase in penetration of power electronic converters in the power systems, a demand for overcurrent/overloading capability has risen for the fault clearance duration. This article gives an overview of the limiting factors and the recent technologies for the over-current performance of SiC power modules in power electronics converters. It presents the limitations produced at the power module level by packaging materials which include semiconductor chips, substrates, metallization, bonding techniques, die attach, and encapsulation materials. Specifically, technologies for over-current related temperatures in excess of 200 • C are discussed. The paper also discusses potential technologies which have been proven or may be potential candidates for improving the safe operating area. The discussed technologies are use of phase change materials below the semiconductor chip, Peltier elements, new layouts of the power modules, control and modulation techniques for converters. Special attention has been given to an overview of various potential phase change materials which can be considered for high-temperature operations.

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Comparison of Thermal Stress during Short-Circuit in Different Types of 1.2 kV SiC Transistors Based on Experiments and Simulations

Cited by 3 publications

References 4 publications

A universal automatic and self‐powered gate driver power supply for normally‐ON SiC JFETs

A universal automatic and self‐powered gate driver power supply for normally‐ON SiC JFETs

Comparison of Thermal Stress During Short-Circuit in Different Types of 1.2-kV SiC Transistors Based on Experiments and Simulations

Enablers for Overcurrent Capability of Silicon-Carbide-Based Power Converters: An Overview

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