Comparison With Nitride Interface Defects and Nanocrystals for Charge Trapping Layer Nanowire Gate-All-Around Nonvolatile Memory Performance

Lin, Yen-Wei; Chiang, Yi-Wei; Lin, Yu-Hsien; Wang, Weicheng; Wu, Yung-Chun

doi:10.1109/ted.2017.2779182

Cited by 3 publications

(4 citation statements)

References 32 publications

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“…Due to the clean vdW interfaces and hot carrier injection across the ultrathin atomic layers, flash memories can achieve an extremely fast writing/ erasing time of ∼20−160 ns. 77−79 Furthermore, in comparison to concurrent Si flash memory, which has a smaller endurance lifetime (>10 5 ), 83 2D flash memory can offer robust operation with an endurance exceeding 10 6 (refs 77 and 82).…”

Section: T H Imentioning

confidence: 99%

“…When gate voltage is applied, the electrons can tunnel through the dielectric layer between the 2D channel and graphene floating gate, resulting in the charge into the floating gate. Due to the clean vdW interfaces and hot carrier injection across the ultrathin atomic layers, flash memories can achieve an extremely fast writing/erasing time of ∼20–160 ns. − Furthermore, in comparison to concurrent Si flash memory, which has a smaller endurance lifetime (>10 5 ), 2D flash memory can offer robust operation with an endurance exceeding 10 6 (refs and ).…”

Section: D Nanoelectronicsmentioning

confidence: 99%

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Can 2D Semiconductors Be Game-Changers for Nanoelectronics and Photonics?

Song,

Rahaman,

Jariwala

2024

ACS Nano

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2D semiconductors have interesting physical and chemical attributes that have led them to become one of the most intensely investigated semiconductor families in recent history. They may play a crucial role in the next technological revolution in electronics as well as optoelectronics or photonics. In this Perspective, we explore the fundamental principles and significant advancements in electronic and photonic devices comprising 2D semiconductors. We focus on strategies aimed at enhancing the performance of conventional devices and exploiting important properties of 2D semiconductors that allow fundamentally interesting device functionalities for future applications. Approaches for the realization of emerging logic transistors and memory devices as well as photovoltaics, photodetectors, electro-optical modulators, and nonlinear optics based on 2D semiconductors are discussed. We also provide a forward-looking perspective on critical remaining challenges and opportunities for basic science and technology level applications of 2D semiconductors.

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Section: T H Imentioning

confidence: 99%

Section: D Nanoelectronicsmentioning

confidence: 99%

Can 2D Semiconductors Be Game-Changers for Nanoelectronics and Photonics?

Song,

Rahaman,

Jariwala

2024

ACS Nano

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“…Until recently, 20–160 ns superior operation speed was achieved in InSe and MoS 2 flash memories based on the clean interface in vdW heterostructures or hot carrier injection directly though the ultrathin 2D material 28 , 29 . However, a competing endurance lifetime to the prevailing Si flash technology (>10 5 cycles) 30 , 31 was rarely demonstrated for a simultaneously ultrafast and robust flash memory. To this end, a recent example that adopts bipolar WSe 2 as the channel displays the potential in achieving well-balance memory performances by combine the Lucky-electron injection mechanism, with an oxide charge trapping layer structure for endurance enhancement 32 .…”

Section: Introductionmentioning

confidence: 99%

Simultaneously ultrafast and robust two-dimensional flash memory devices based on phase-engineered edge contacts

Yu,

Wang,

Zhuge

et al. 2023

Nat Commun

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As the prevailing non-volatile memory (NVM), flash memory offers mass data storage at high integration density and low cost. However, due to the ‘speed-retention-endurance’ dilemma, their typical speed is limited to ~microseconds to milliseconds for program and erase operations, restricting their application in scenarios with high-speed data throughput. Here, by adopting metallic 1T-LixMoS2 as edge contact, we show that ultrafast (10–100 ns) and robust (endurance>106 cycles, retention>10 years) memory operation can be simultaneously achieved in a two-dimensional van der Waals heterostructure flash memory with 2H-MoS2 as semiconductor channel. We attribute the superior performance to the gate tunable Schottky barrier at the edge contact, which can facilitate hot carrier injection to the semiconductor channel and subsequent tunneling when compared to a conventional top contact with high density of defects at the metal interface. Our results suggest that contact engineering can become a strategy to further improve the performance of 2D flash memory devices and meet the increasing demands of high speed and reliable data storage.

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“…[21][22][23][24][25][26][27] Until recently, 20-160 ns superior operation speed was achieved in InSe and MoS2 flash memories based on the clean interface in vdW heterostructures or hot carrier injection directly though the ultrathin 2D material. 28,29 However, a competing endurance lifetime to the prevailing Si flash technology (>10 5 cycles) 30,31 was rarely demonstrated for a simultaneously ultrafast and robust flash memory. To this end, a recent example that adopts bipolar WSe2 as the channel displays the potential in achieving well-balance memory performances by combine the Lucky-electron injection mechanism, with an oxide charge trapping layer structure for endurance enhancement.…”

mentioning

confidence: 99%

Simultaneously Ultrafast and Super-Robust Two-dimensional Flash Memory Enabled by Phase Engineered Edge Contact

Zhai

Wang

et al. 2023

Preprint

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As the prevailing non-volatile memory (NVM), flash memory offers mass data storage at high integration density and low cost. However, due to the dilemma of ‘speed-retention-endurance’, their typical operation speed is limited ~microseconds to milliseconds for program and erase, restricting their application in scenarios with high-speed data throughput. Here, by adopting metallic 1T-LixMoS2 as edge contact, we show that ultrafast (10-100 ns) and super-robust (endurance>106 cycles, retention>10 years) memory operation can be simultaneously guaranteed in two-dimensional van der Waals heterostructure flash memory with 2H-MoS2 as semiconductor channel. The superior performance stems from the highly gate tunable Schottky barrier at the edge contact, which facilitates hot carrier injection to semiconductor channel and subsequent tunneling if compared to conventional top contact that has rich defects under metal. Our results show the promise of inventing 2D flash memory via contact engineering to further advance the prevailing flash memory technology to meet for the increasing demand of high speed and reliable data storage.

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Comparison With Nitride Interface Defects and Nanocrystals for Charge Trapping Layer Nanowire Gate-All-Around Nonvolatile Memory Performance

Cited by 3 publications

References 32 publications

Can 2D Semiconductors Be Game-Changers for Nanoelectronics and Photonics?

Can 2D Semiconductors Be Game-Changers for Nanoelectronics and Photonics?

Simultaneously ultrafast and robust two-dimensional flash memory devices based on phase-engineered edge contacts

Simultaneously Ultrafast and Super-Robust Two-dimensional Flash Memory Enabled by Phase Engineered Edge Contact

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