2004
DOI: 10.1016/j.diamond.2004.06.033
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Comparisons on properties and growth mechanisms of carbon nanotubes fabricated by high-pressure and low-pressure plasma-enhanced chemical vapor deposition

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Cited by 19 publications
(2 citation statements)
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“…The most successful variants of the structures had a turn-on field of 2.5 V/µm and an effective field enhancement factor β of 6200-7800. The influence of different growth conditions on the emission characteristics of the same arrays of CNTs was shown in [30]. The best result showed that the threshold and turn-on electric fields were 2.48 and 3.98 V/µm, respectively, and the emission current density reached 30 mA/cm 2 .…”
Section: Introductionmentioning
confidence: 99%
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“…The most successful variants of the structures had a turn-on field of 2.5 V/µm and an effective field enhancement factor β of 6200-7800. The influence of different growth conditions on the emission characteristics of the same arrays of CNTs was shown in [30]. The best result showed that the threshold and turn-on electric fields were 2.48 and 3.98 V/µm, respectively, and the emission current density reached 30 mA/cm 2 .…”
Section: Introductionmentioning
confidence: 99%
“…The literature compares the emission characteristics of CNT arrays obtained under different conditions, with different cathode areas and interelectrode spacing, which makes it difficult to compare them with each other [27][28][29][30][31][32][33][34][35][36][37][38]. Therefore, for a clear comparison of the field emission characteristics of various morphologies of CNT arrays according to a series of criteria, this work presents, for the first time, simple and common morphologies of CNT arrays grown on a silicon substrate by the DC PECVD method in the presence of catalysts.…”
Section: Introductionmentioning
confidence: 99%