Compensation devices versus power MOS and high speed IGBT - a device physics based guideline for the application

Deboy, G.; Purschel, M.; Schmitt, Markus; Willmeroth, A.

doi:10.1109/essderc.2001.195205

Cited by 9 publications

(2 citation statements)

References 7 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The breakdown voltage of the CoolMOS is a quantity that very sensitively reacts to any additional charge which disturbs the exact charge balance between n and p columns in the blocking state, because even a slight charge imbalance causes the electric field distribution to change from trapezoidal to triangular shape leading to a drastic reduction of the blocking voltage BV DSS . 22 Figure 13 shows that BV DSS progressively degrades with increasing fluence of electron irradiation for the lower annealing temperature at T ϭ 493 K, but fully recovers to the initial value of the nonirradiated device for an annealing temperature of T ϭ 623 K. Under the assumption that the defects may induce a homogeneous change of the n or the p doping, simulations of the breakdown voltage reproduce the experimental data with a value of the additional p doping slightly higher than the n doping ͑Fig. 13͒.…”

Section: Optimization Of the Coolmos™ Body Diodementioning

confidence: 99%

Analysis of Radiation-Induced Defects and Performance Conditioning in High-Power Devices

Niedernostheide¹,

Schmitt²,

Schulze³

et al. 2003

J. Electrochem. Soc.

Self Cite

View full text Add to dashboard Cite

Valuable information about defect profiles and defect concentrations in high-power semiconductor devices can be obtained by analyzing electrical device characteristics. This is demonstrated by evaluating reverse current-voltage characteristics of p-n junctions, from which the vertical radiation-induced defect profiles of the dominant generation center can be extracted. Measured data from proton-irradiated high-power diodes find a reasonable interpretation when radiation-induced doping effects, as obtained from spreading resistance measurements, are taken into account. Further investigations focus on defects in electron-irradiated power metal oxide semiconductor transistors, which were analyzed by stationary and dynamical diagnostic methods in combination with device simulations. Equipped with a detailed understanding of the action of radiation-induced defects, we make use of it in order to tailor certain characteristic electrical properties of high-voltage devices by exploiting carrier-trapping effects as well as radiation-induced changes in resistivity. The main focus lies on the blocking voltage and the switching behavior.

show abstract

Section: Optimization Of the Coolmos™ Body Diodementioning

confidence: 99%

Analysis of Radiation-Induced Defects and Performance Conditioning in High-Power Devices

Niedernostheide¹,

Schmitt²,

Schulze³

et al. 2003

J. Electrochem. Soc.

Self Cite

View full text Add to dashboard Cite

show abstract

“…The fabrication of mostly charge compensated n-and p-pillars is hence the key to enabling this technology. Detailed information on the device physics, implementation issues, and behavior of SJ devices can be found in [14]- [16]. In Fig.…”

Section: Switching Model Of a Power Mosfetmentioning

confidence: 99%

On the Tradeoff Between Input Current Quality and Efficiency of High Switching Frequency PWM Rectifiers

Hartmann

Ertl

Kolar

2012

IEEE Trans. Power Electron.

View full text Add to dashboard Cite

Due to their basic physical properties, power MOSFETs exhibit an output capacitance C oss that is dependent on the drain-source voltage. This (nonlinear) parasitic capacitance has to be charged at turn-off of the MOSFET by the drain-source current in rectifier applications that yield input current distortions. A detailed analysis shows that the nonlinear behavior of this capacitance is even more pronounced for modern super junction MOS-FET devices. Whereas C oss increases with increasing chip area, the on-state resistance of the MOSFET decreases accordingly. Hence, a tradeoff between efficiency and input current distortions exists. A detailed analysis of this effect considering different semiconductor technologies is given in this study and a Pareto curve in the η-THD I space is drawn that clearly highlights this relationship. It is further shown that the distortions can be reduced considerably by the application of a proper feedforward control signal counteracting the nonlinear switching delay due to C oss . The theoretical considerations are verified by experimental results taken from 10-kW laboratory prototypes with the switching frequencies of 250 kHz and 1 MHz.Index Terms-Efficiency, high-frequency power converters, input current quality, super junction (SJ).

show abstract

A Study of Super Junction Trench Gate IGBT with Fully Self-Aligned Fabrication Technology

Yuan

Liu

2015

IETE Journal of Research

View full text Add to dashboard Cite

Compensation devices versus power MOS and high speed IGBT - a device physics based guideline for the application

Cited by 9 publications

References 7 publications

Analysis of Radiation-Induced Defects and Performance Conditioning in High-Power Devices

Analysis of Radiation-Induced Defects and Performance Conditioning in High-Power Devices

On the Tradeoff Between Input Current Quality and Efficiency of High Switching Frequency PWM Rectifiers

A Study of Super Junction Trench Gate IGBT with Fully Self-Aligned Fabrication Technology

Contact Info

Product

Resources

About