Compensation processes in nitrogen doped ZnSe

Hauksson, I.; Simpson, J.; Wang, S. Y.; Prior, K. A.; Cavenett, B.C.

doi:10.1063/1.108296

Cited by 189 publications

(60 citation statements)

References 8 publications

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“…The g-value of 1.36 compared with 1.10 is entirely consistent with a greater localisation of the wave function for a deeper donor (the consequent reduction in the orbital contribution to the magnetic moment causes the g-value to approach more closely the spin-only value of 2.0), though the exact nature of the new donor remains unknown. However, as suggested by Hauksson et al [2], a selenium vacancy associated with a nitrogen substituted at …”

mentioning

confidence: 87%

“…4. The ionisation energy of the new, compensating donor induced by nitrogen doping is not known accurately, since current estimates of this quantity are based on the energy differences be---tween corresponding transitions in the two series of donor-acceptor recombination lines (because of the Coulomb interaction between the ionised donor and ionised acceptor in the final state, these differences are very sensitive to the spatial distribution of the centres and different authors obtain values for E , ranging from 44 [2] to 55 meV [3]). In Fig.…”

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confidence: 99%

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Raman Scattering by Acceptors and Donors in p‐Type ZnSe

Davies

Wolverson

Boyce

1995

Physica Status Solidi (b)

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Raman spectroscopy is used to study dopants introduced into ZnSe to produce p-type material. Special attention is paid to nitrogen-doped epitaxial layers and Raman scattering involving the electronic levels of nitrogen acceptors is reported. In these layers spin-flip scattering by electrons at a new type of donor centre at adepth ofabout 50meV is also observed. This new donor is believed to play an important role in the compensation process that limits the net acceptor concentrations attainable in this material.

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confidence: 87%

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confidence: 99%

Raman Scattering by Acceptors and Donors in p‐Type ZnSe

Davies

Wolverson

Boyce

1995

Physica Status Solidi (b)

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“…Under low flow rate, zero-phonon DAP emission and its phonon replicas is well-resolved and dominant and band edge emission can be seen moderately. However, the DAP emission peak shows red-shift from 2.70 to 2.65 eV with increasing nitrogen flow rate, which is due to self compensation by formation of deep compensating donor [5]. In addition, line shapes of the DAP emission begin to overlap with its phonon replica, and eventually lead to unstructured shape.…”

Section: Resultsmentioning

confidence: 88%

Electrical and optical properties of ZnSe:N epilayers

Joh

Kim

Song³

et al. 2004

phys. stat. sol. (c)

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Using nitrogen radio-frequency (RF) plasma operated in low-pressure metal-organic chemical vapor deposition (LP-MOCVD), ZnSe:N epilayers were grown. Their optical and electrical properties were investigated with photoluminescence (PL) and deep level transient spectroscopy (DLTS). PL spectra of ZnSe : N epilayers show that acceptor-bound exciton (I 1 ) at 2.792 eV, donor-acceptor pair (DAP) at 2.65 ~ 2.70 eV and its phonon replica in the lower energy side were dominant at low temperature. As increasing temperature, the intensity of the DAP line decreases rapidly compared to that of the exciton line. In addition, the free (electron)-to-acceptor (FA) emission appears on the high energy side of the DAP emission due to the partial ionization of shallow donors above 30 K. From the temperature dependence of the PL peak intensities, it can be seen that the activation energy of exciton line (22.3 meV) is in good agreement with the binding energy of the free exciton (21 meV). We investigate electrical properties of nitrogen-doped ZnSe films by measuring capacitance-voltage characteristic curve and DLTS. We have carried out DLTS to study deep hole traps in ZnSe:N epilayer and hole traps with the activation energy of 470 ~ 790 meV were detected.

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“…Hauksson et al [3] proposed that the compensating donor with a binding energy of ~4 5 meV is a complex involving a native defect such as V,,-Zn-N,,.…”

Section: Origins Of Deep Donors and Acceptorsmentioning

confidence: 99%

“…The possible microscopic origins of this phenomenon are 1. compensation by native point defects [3], 2. compensation by interstitial N atoms [4, 51, and 3. strong lattice relaxation which converts the shallow acceptors into deep levels [6].…”

Section: Introductionmentioning

confidence: 99%

Doping Characteristics of N‐Doped p‐ZnSe and Cl‐Doped n‐ZnSe

Yao

Zhu

1995

Physica Status Solidi (b)

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Doping characteristics of N-doped p-ZnSe and CI-doped n-ZnSe are extensively studied by Hall measurements, CV, PL, DLTS, ICTS, and ion-beam analysis. N forms both deep donors and acceptors in heavily N-doped ZnSe. The lattice location of the N atoms in heavily N-doped ZnSe is studied by ion beam channeling to get insight into the compensation mechanism. Free excitonic emission shifts to the lower energy side with N concentration, indicating a shrinkage of band gap. It is suggested that the carrier compensation mechanism in heavily C1-doped ZnSe is due to degradation of crystallinity. The maximum carrier concentration is greatly enhanced by selective doping of C1.

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Compensation processes in nitrogen doped ZnSe

Cited by 189 publications

References 8 publications

Raman Scattering by Acceptors and Donors in p‐Type ZnSe

Raman Scattering by Acceptors and Donors in p‐Type ZnSe

Electrical and optical properties of ZnSe:N epilayers

Doping Characteristics of N‐Doped p‐ZnSe and Cl‐Doped n‐ZnSe

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