Competition between strain and interface energy during epitaxial grain growth in Ag films on Ni(001)

Floro, J. A.; Thompson, Carl V.; Carel, R.; Bristowe, Paul D.

doi:10.1557/jmr.1994.2411

Cited by 85 publications

(36 citation statements)

References 31 publications

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“…While the rate of the ion diffusion to the grain boundaries increases, the sintering temperature increases. The important driving forces for the mechanism in general are: excess free energy in a grain boundary which makes the grain to minimize its local surface area, and the volume free energy difference between the neighboring grains on either side of a grain boundary [51]. Shirsath et al [52] correlated the increasing particle size with increasing sintering temperature to the coalescence that increases as sintering temperature increases.…”

Section: 2 Grain Size Measurementsmentioning

confidence: 99%

Effect of sintering temperature on microstructure and electrical properties of Sr1−x(Na0.5Bi0.5) x Bi2Nb2O9 solid solutions

Naceur¹,

Megriche²,

Maaoui³

2014

J Adv Ceram

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Abstract:In this study, we investigated the effect of sintering temperature on densification, grain size, conductivity and dielectric properties of Sr 1 x (Na 0.5 Bi 0.5 ) x Bi 2 Nb 2 O 9 ceramics, prepared by hydrothermal method. Pellets were sintered at different temperatures. Density increased with sintering temperature, reaching up to 96% at 800 . A grain growth was observed with increasing sintering temperature. Impedance spectroscopy analyses of the sintered samples at various temperatures were performed. Increase in dielectric constant and in Curie temperature with sintering was discussed. Electrical conductivity and activation energy were calculated and attributed to the microstructural factors.

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Section: 2 Grain Size Measurementsmentioning

confidence: 99%

Effect of sintering temperature on microstructure and electrical properties of Sr1−x(Na0.5Bi0.5) x Bi2Nb2O9 solid solutions

Naceur¹,

Megriche²,

Maaoui³

2014

J Adv Ceram

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“…Grain growth may generate stresses if grain boundaries have densities that differ from the bulk [31]. However, grain growth can also relax stresses, either due to the removal of boundary segments formed by zipping, or due to preferential .-growth of elastically soft or plastically soft grains [32][33][34][35]. While some evidence for e grain growth effects on stress have been inferred horn thermal cycling experiments (e.g., see [6]), we note that growth interrupts of continuous Ag films, both in this work and in the work of others [1,5], produce no changes in the bulk film stress, even though grain growth is likely to be occurring [1].…”

Section: Other Mechanismsmentioning

confidence: 99%

The dynamic competition between stress generation and relaxation mechanisms during coalescence of Volmer–Weber thin films

Floro

Hearne

Hunter

et al. 2001

Journal of Applied Physics

343

206

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Real-time measurements of stress evolution during the deposition of VolmerWeber thin films reveal a complex interplay between mechanisms for stress generation and stress relaxation. We observed a generic stress evolution from compressive to tensile, then back to compressive stress as the film thickened, in amorphous and polycrystalline Ge and Si, as well as in polycrystall;ne Ag, Al, and Ti. Direct measurements of stress relaxation during growth interrupts demonstrate that the generic behavior can occur even in the absence of stress relaxation. When relaxation did occur, the mechanism depended sensitively on whether the film was continuous or discontinuous, on the process conditions, and on the fildsubstrate interracial strength.For Ag films, interracial shear dominated the early relaxation behnavior, whereas this mechanism was negligible in Al films due to the much stronger bonding at the A1/SiOz interface. For amorphous Ge, selective relaxation of tensile stress was observed only at elevated temperatures, consistent with surface-diffusion-based mechanisms. In "all the films studied here, stress relaxation was suppressed after the films became continuous...

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“…Reference [54] and chapter five show that elastic strain energy density anisotropy provides the main driving force for the growth of (001) grains in Ag and that it is unlikely that the anisotropy of the yield stress alone explains the observed orientations.…”

Section: -Abnormal and Secondary Grain Growthmentioning

confidence: 99%

“…We will not review the details of the model which can be found in refs. [47,54]. The sequence of events leading to (001) grains with a P = 170 orientation and to a tilt of approximately the right magnitude involves multiple twinning operations.…”

Section: -Epitaxial Grain Growth Experiments In Ag/(001)nimentioning

confidence: 99%

Grain Growth and Texture Evolution in Thin Films

Thompson¹,

Carel²

1996

MSF

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Microstructural and texture evolution during grain growth in polycrystalline thin films was investigated. Grain growth in thin films is a coarsening process driven by the reduction of grain boundary energy, surface energies, and strain energy density. Because crystal properties can be anisotropic, grain growth in thin films is an orientation selective process. Surface and interfacial energy minimization or reduction favors the growth of grains with low combined surface and interfacial free energy. For the films and substrates investigated in this thesis, surface and interfacial energy promotes the growth of (111)-textured grains. Thin films on thick substrates are usually subjected to a non-zero state of strain, arising from differential thermal expansion between the film and the substrate, from densification and from intrinsic strains. For elastically deformed fcc metal films, strain energy density promotes the growth of (001)-textured grains. In plastically deformed films, strain energy density can favor the growth of (011)-textured grains; this results from the orientation dependence of the yield stress of grains in thin films. (111) grains are predicted to maximize the yield stress, and (011) grains are predicted to have low yield stress. An analytic model for texture evolution during grain growth in thin films can be developed by equating the magnitudes of the orientation-dependent driving forces, for pairs of orientations. The analytic model can be used to generate texture maps that define which orientations are expected to grow preferentially as a function of the processing conditions, i.e., the deposition temperature, the grain growth temperature, and the film thickness. Experimental texture maps can be generated and used to test the validity of the analytic model.Computer simulations of grain growth have been carried out using a front-tracking simulation method. Interfacial energy, elastic and plastic strain energy density, and grain growth stagnation are accounted for in the simulations. Materials parameters characteristic of Ag/(001)Ni were used. The main result of the simulations is to validate the analytic model for texture evolution during grain growth. The computer simulations also provide insights into the coupling between yielding and grain growth.Grain growth experiments in Ag/(001)Ni/(001)Ag/(001)MgO, Ag/SiO2/MgO, Ag/SiO 2 /Si, Ni/SiO 2 /Si, and Al/SiO 2 /Si were carried out. Both the thickness and the thermal strain were systematically varied, and an experimental texture map was constructed for each system. The dependence of texture evolution on strain and thickness was found to be consistent with the trends predicted by the analytic model in all of these systems. While the texture map for Ag/(001)Ni was found in quantitative agreement with the model, with no adjustable parameters, no single set of fitting parameters was found for Ag/SiO 2 /Si and for Ag/SiO 2 fMgO. Possible origins of this discrepancy are discussed.Additional experiments are proposed that could provide a better under...

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Competition between strain and interface energy during epitaxial grain growth in Ag films on Ni(001)

Cited by 85 publications

References 31 publications

Effect of sintering temperature on microstructure and electrical properties of Sr1−x(Na0.5Bi0.5) x Bi2Nb2O9 solid solutions

Effect of sintering temperature on microstructure and electrical properties of Sr1−x(Na0.5Bi0.5) x Bi2Nb2O9 solid solutions

The dynamic competition between stress generation and relaxation mechanisms during coalescence of Volmer–Weber thin films

Grain Growth and Texture Evolution in Thin Films

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