Measurements on a single crystal of the electrical conductivity in the range 90--400 K showed the compound to be a semiconductor with an activation energy close to 0-07 eV.We wish to thank Dr Karl-Axel Wilhelmi for valuable discussions and Professor Arne Magn6li for his kind interest. Thanks are also due to Dr Sven Westman for revising the English text and to Mr Tomasz Niklewski for measurements of the density and the electrical conductivity.The investigation has been financially supported by the Swedish Natural Science Research Council.References FORSLUND, B. (1975 The crystal structure of Cs2VsOt3 has been determined and refined to a final R, value of 0.019 from 267 independent reflexions and 35 variables. Three-dimensional X-ray diffractometer data (Mo Ka radiation) were used. The space group is I4mm (No. 107), and the unit-cell dimensions are a = 7.762(I), c = 11.746(2) A, V = 707.7 ,&, Z = 2. The new structure type can be visualized in different, complementary ways; it can be regarded as composed of VO 4 tetrahedra and VO~ square pyramids in the ratio 4 : 1 (joined exclusively by comer-sharing) forming 2 2-oo(V50~3) layers, held together by Cs + ions: or composed of isolated isocyclic rings of V40~-tetramers and VO 2+ (vanadyl) and Cs + ions. The observed, averaged V-O distances for the fourand five-coordinated V atoms are 1.71 and 1.96 A respectively: the V-O distance in the vanadyl ion is 1.587(16) A. The Cs + ions have twelve nearest O neighbours in the range 3-24-3.54 /~,. The structure is compared with those of K2V308 and K3VsOI4.