Complementary bipolar resistive switching behavior in lithium titanate memory device

Liao, Yi; Chen, Gongying; Luo, Linshan; Yu, Jianghui; Huang, Wei; Lin, Guoxing; Wang, Jianyuan; Xu, Jianfang; Li, Cheng; Chen, Songyan

doi:10.35848/1882-0786/acd35e

Cited by 1 publication

(2 citation statements)

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“…In our previous report, lithium ions migration and the valence change of the Ti in LTO under applied electric field were verified by x-ray photoelectron spectroscopy depth profile [23]. Below shows the time-of-flight secondary ion mass spectrometry (ToF-SIMS, M6, IONTOF) measurement result on our device.…”

Section: Resultsmentioning

confidence: 66%

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Lithium titanate synaptic device imitating lithium-ion battery structure

Liao,

Chen,

et al. 2024

J. Phys. D: Appl. Phys.

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With the growing prevalence of neuromorphic computing algorithms, there is a growing need for electronic synaptic devices. In this study, using Li4+x Ti5O12 (LTO) as the resistive switching layer, C as the lithium ions storage layer, and Li1+x Al x Ti2−x (PO4)3 (LATP) as ions transmission layer, a synaptic device is designed with the structure of Pt/C/LATP/LTO/PtSi to imitate the lithium-ion battery. Variation of the thickness of the LATP layer in the LTO device is explored to show the impact on the device’s synaptic performance. With a LATP thickness of 100 nm, the LTO synaptic device exhibits a high potentiation/depression cyclic stability of over 50 cycles, improved potentiation/depression linearity and smoothness. The synaptic potentiation/depression is ascribed to migration of lithium ions from the LTO layer. A conductance relaxation characteristic of the device is explained by battery self-discharge phenomenon. The battery effect in the LTO device also led to generation of electromotive force. The study of battery-imitating LTO synaptic device offers new perspectives on the connection between battery and analog synaptic device.

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Section: Resultsmentioning

confidence: 66%

“…Lithium sputtering powers larger than 75 W will lead to lithium precipitate during sputtering and film instability in air. More details of the LTO film process can be referred to our previous work [23].…”

Section: Methods Of the Devices Fabricated And Characterizedmentioning

confidence: 99%