Complementary exposure of 70 nm SoC devices in electron projection lithography

Yamashita, Hiroshi; Amemiya, Isao; Takeuchi, Kunio; Masaoka, Hideki; Takahashi, Kimitoshi; Ikeda, Akira; Kuroki, Yoshio; Yamabe, Masaki

doi:10.1116/1.1622936

Cited by 6 publications

(1 citation statement)

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“…We have been developing very reliable processes for making both types of EPL masks, namely, the stencil masks and the continuous membrane masks. 8 Since the patterns on the membrane do not require splitting, the membrane masks are considered superior to the stencil masks. The complementary set was created using a mask pattern split software M-SPLIT.…”

Section: Introductionmentioning

confidence: 99%

Performance improvement of diamondlike carbon membrane masks for electron projection lithography

Amemiya

Yamashita²,

Taniguchi

et al. 2005

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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Articles you may be interested in Thermal analysis of diamondlike carbon membrane masks in projection electron-beam lithographyThis article describes the fabrication of eight-inch continuous membrane masks with a 15-nm-thick support membrane for electron projection lithography ͑EPL͒. In order to develop an extremely thin support membrane with a tensional stress, two techniques were applied; one is a low pressure deposition process to improve the membrane bulk density, and the other is Si addition during the conventional carbon membrane deposition for improving the atomic distance mismatch between substrate and deposited film, and also to address the membrane volume strain cause by the rise in the tensional stress under the low pressure deposition condition. By using Si-additional techniques, an extremely thin membrane with a tensional stress was formed under the conditions of less than 0.5 Pa chamber pressure. Long-term membrane stress stability of Si-added extremely thin membranes were particularly improved. It was less than 3 MPa in elapsed times of 400 h. The zero-loss electron transmittance for the fabricated 15-nm-thick membrane mask was measured to be 70.4%. Due to the development of an extremely thin membrane with high zero-loss electron transmittance of more than 50%, our high-performance membrane masks are superior to the complementary stencil masks in terms of exposure throughput.

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Section: Introductionmentioning

confidence: 99%

Performance improvement of diamondlike carbon membrane masks for electron projection lithography

Amemiya

Yamashita²,

Taniguchi

et al. 2005

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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Nanolithography in the Evanescent Near Field

Alkaisi

Blaikie

2006

Micromanufacturing and Nanotechnology

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REVIEWNew applications in microscopy and nanofabrication have emerged from recent advances in the optical near field. This paper reviews the implications of using evanescently decaying components in the near field of a photomask as a lithography tool for the fabrication of nanoscale structures. Patterning at resolution below the diffraction limit for projection optical lithography has been demonstrated using such evanescent near-field optical lithography (ENFOL) with broadband illumination (365±600 nm). Line widths of 50 nm and gratings with 140 nm period have been achieved. Ultrathin photoresist layers in conjunction with conformable photomasks are employed and both additive and subtractive pattern transfer processes have been developed. Full electromagnetic field simulations of the exposure process show that a high-contrast image is present within the resist layer, and that the exposure is dominated by one polarization for the grating structures studied. These reveal the potential of ENFOL in achieving feature sizes smaller than k/20. ± [*] Dr. REVIEW M. M. Alkaisi et al./Nanolithography in the Evanescent Near Field Fig. 15. Peak intensity at the grating exit aperture (left axis) and zeroth order intensity coefficient T 0 (right axis) versus the grating conductor radii of curvature r. The simulation model is the same as that in Figure 11.

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