Complementary Hybrid Semiconducting Superlattices with Multiple Channels and Mutual Stabilization

Kim, Jongchan; Huong, Chu Thi Thu; Long, Nguyen Van; Kim, Min Jae; Jeong, Jae Kyeong; Choi, Sungju; Kim, Dae Hwan; Lee, Chi H.; Lee, Sang Uck; Sung, Myung Mo

doi:10.1021/acs.nanolett.0c00859

Cited by 17 publications

(23 citation statements)

References 49 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The device performances such as mobility, on/off current ratio, and SS of previous reports with our results are summarized in Table 1. [ 1,23,24,26–28,41,44–45,52,54–57,63–68 ] To explain the role of Gd and Li in ZnO, we propose a model shown in Figure 5d–f, where the Zn 2+ ion can be replaced by the Gd 3+ ion, reducing electron concentration in a channel. The Li + replaces the Zn 2+ interstitial site, inducing extra electron in the channel.…”

Section: Resultsmentioning

confidence: 99%

Extremely Stable, High Performance Gd and Li Alloyed ZnO Thin Film Transistor by Spray Pyrolysis

Saha

Bukke

Jang

2020

Adv Elect Materials

View full text Add to dashboard Cite

ZnO is a well-known oxide semiconductor because of its excellent electrical and optical properties due to its crystalline structure with high carrier mobility and tunable bandgap by alloying. [13,14] Although, ZnO TFT has high carrier density with crystalline structure, it has some limitations, such as instabilities. It is known that the instability of pristine ZnO is related to the grain boundary defects related to oxygen vacancy and Zn interstitial. [15] Most of pristine ZnO TFTs show negative turn-on voltage owing to its high carrier concentration, which limits the application of the TFTs to gate drivers of active-matrix organic light-emitting diode display. Metal doping in ZnO, such as In, Li, N, F, Al, Ga, Hf, La, Mg, Y, and Zr is proposed to improve the performance and/or stability. [16-23] Many ternary and quaternary metal oxide TFTs are reported to improve both stability and mobility, but the results are not promising. Adamopoulos et al. [24] reported high mobility of ZnO TFT (85 cm 2 V −1 s −1) by Li incorporation on spray pyrolyzed ZrO x gate insulator. The increase in mobility by Li incorporation is due to the increase in grain size, but due to high carrier concentration and defects in semiconductor and interface, the offstate currents are high (10 −8 A). Whereas, Park et al. [25] reported La doping in amorphous IZO TFT which reduces the oxygen deficiency and improves the stability but the mobility is low (≈4.2 cm 2 V −1 s −1). Xifeng et al. [26] reported electron mobility ≈1.94 cm 2 V −1 s −1 by Hf doping in amorphous IZO TFT, where Hf works as carrier suppressor and increases the on/off current ratio by lowering the off-currents. Tue et al. [27] reported the Zr doping in amorphous IZO TFT to control the oxygen vacancies due to its lower slandered electron potential to the off current. Jun et al. [28] reported the La doping in amorphous ZTO TFT to improve the subthreshold swing and on/off current ratio. The electronegativity, ionic radius, and dopant-oxygen bond dissociation energy are important to improve the performance and stability of oxide TFT. As the difference of electronegativity between dopants and oxygen rises, the metaloxygen bond energy increases. Besides, the low standard electrode potential (SEP) of metal ion can decrease the traps due to its binding tendency with oxygen. [29] Higher bond dissociation energy leads to the stronger metal-oxygen network and less oxygen vacancy, which helps to improve the stability of the TFTs. [30] A Gd has lower electronegativity (1.20) compare to Zn (1.65), lower SEP (−2.27 V) compare to Zn (−0.76 V) and higher bond dissociation The simultaneous doping effect of Gadolinium (Gd) and Lithium (Li) on zinc oxide (ZnO) thin-film transistor (TFT) by spray pyrolysis using a ZrO x gate insulator is reported. Li doping in ZnO increases mobility significantly, whereas the presence of Gd improves the stability of the device. The Gd ratio in ZnO is varied from 0% to 20% and the Li ratio from 0% to 10%. The optimized ZnO TFT with codoping of 5% Li and 10% Gd exhibits...

show abstract

Section: Resultsmentioning

confidence: 99%

Extremely Stable, High Performance Gd and Li Alloyed ZnO Thin Film Transistor by Spray Pyrolysis

Saha

Bukke

Jang

2020

Adv Elect Materials

View full text Add to dashboard Cite

show abstract

“…One is to exploit the full potential of TFTs with ALD‐derived n ‐channel oxide channels to verify the feasibility of using them as non‐planar structures such as vertical TFT (VTFT) 72–75 in AR/VR displays or three‐dimensional NAND flash memory. The other combines LTPS‐compatible high‐performance TFTs with an ALD‐derived n ‐type semiconducting channel layer through novel structures including heterostructures, 22–25 bilayers, 26 and hybrid channels 27,28 …”

Section: Ald‐derived N‐channel Oxide Tftsmentioning

confidence: 99%

Section: Ald‐derived N‐channel Oxide Tftsmentioning

confidence: 99%

“…In this review, recent research on ALD‐derived semiconducting oxides and insulating dielectric films and their suitability for high‐performance oxide TFTs is described. The basic principles of ALD and earlier approaches to flexible oxide TFTs were reviewed in 2018 by Sheng et al 20,21 We therefore focused on studies of ALD‐based oxide TFTs reported since 2018, highlighting the use of novel structures including heterostructures, 22–25 bilayers, 26 and hybrid channels 27,28 in the development of LTPS‐compatible high‐performance oxide TFTs. Efforts to create 3D applications of ALD‐derived oxide TFTs, including vertical TFTs and complementary metal–oxide semiconductor (CMOS) TFTs for AR/VR, monolithic 3D devices, and 3D memory are also covered.…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Recent progress and perspectives on atomic‐layer‐deposited semiconducting oxides for transistor applications

2022

Self Cite

View full text Add to dashboard Cite

This paper reviews recent developments in the fabrication of high‐performance n‐channel metal‐oxide thin‐film transistors (TFTs) through atomic‐layer deposition (ALD), which are now attracting attention due to their potential for use in augmented and virtual reality, ultra‐high‐definition organic light‐emitting diodes, and flexible electronics. Recent trends in research on TFT backplanes for display applications are provided in the introduction. In the main section, ALD‐derived n‐type oxides serving as active layers are classified into binary, ternary, and quaternary systems, and recent developments and critical issues in n‐channel oxide TFTs are described. The performance of n‐channel oxide TFTs can be boosted through advanced architectures, including stacked heterojunction channels using two‐dimensional electron gases, and the introduction of high‐k dielectric such as ALD‐derived hafnium oxide, which is highlighted in this review. Finally, progress in p‐channel ALD‐derived oxide TFTs is briefly addressed with respect to complementary metal–oxide‐semiconductor applications.

show abstract

“…[7b, 11] Recently, a series of covalent OIHSLs, metalcone alloys, have emerged with metal oxide nanoslabs interconnected by benzene via covalent bond. [12] Zncone alloy shows good stability and strong electron wavefunction overlap between pconjugated organic and inorganic sublattices. [13] These features are favorable for chemical applications.…”

mentioning

confidence: 99%

A Covalent Organic–Inorganic Hybrid Superlattice Covered with Organic Functional Groups for Highly Sensitive and Selective Gas Sensing

et al. 2021

View full text Add to dashboard Cite

Organic-inorganic hybrid superlattices (OIHSLs) hold attractive physical and chemical properties, while the construction of single-crystal covalent OIHSLs has not been achieved. Herein a coordination assembly strategy was proposed to create a single-crystal covalent OIHSL PbBDT (BDT = 1,4-benzenedithiolate), where layered [PbS 2 ] sublattice covalently connects with benzene sublattice. The covalent bonding offers better thermo-/chemi-stability, inter-sublattice electron transport, and unique organic-group-functionalized surface, which may enable better performances in chemical applications than non-covalent OIHSL. These features endow PbBDT with the highest sensitivity, the lowest detection limit and excellent selectivity towards NO 2 at room temperature among all chemiresistive gas-sensing materials with reported response time less than 2 min without the need of light assistance.

show abstract

Complementary Hybrid Semiconducting Superlattices with Multiple Channels and Mutual Stabilization

Cited by 17 publications

References 49 publications

Extremely Stable, High Performance Gd and Li Alloyed ZnO Thin Film Transistor by Spray Pyrolysis

Extremely Stable, High Performance Gd and Li Alloyed ZnO Thin Film Transistor by Spray Pyrolysis

Recent progress and perspectives on atomic‐layer‐deposited semiconducting oxides for transistor applications

A Covalent Organic–Inorganic Hybrid Superlattice Covered with Organic Functional Groups for Highly Sensitive and Selective Gas Sensing

Contact Info

Product

Resources

About