Complementary metal–oxide–semiconductor 60 GHz power amplifier by in‐phase power combining and digitally assisted power back‐off efficiency enhancement

Abstract

A two‐dimensional in‐phase power combining with digitally assisted self‐tuning is demonstrated in this study for complementary metal–oxide–semiconductor (CMOS) 60 GHz power amplifier (PA) to improve power efficiency. One digitally assisted 4‐way power‐combined PA prototype was implemented in 65‐nm CMOS process. The performance of measured results show output power of 17.2 dBm, power added efficiency of 11.3% with 1.2 V supply voltage, and up to 170–190% efficiency improvement during power back‐off for the entire 7 GHz band at 60 GHz.

Multi-Channel FSK Inter/Intra-Chip Communication by Exploiting Field-Confined Slow-Wave Transmission Line

“…Vtune is necessary here to align the center oscillation frequency to be equal to that of receiver. The PA design (M3−M8) is similar to LNA, except that the transistor size is larger to generate higher output power [24]. Power combining can be used to enhance the output power [25,26].…”

Wideband millimetre‐wave CMOS power amplifier using transistor‐based inductive source degeneration and specially shielded transformer

“…Besides, common source (CS) configuration is widely used in mm-wave PAs because of good reliability and flexibility [3][4][5]. In architecture design, several power combining techniques based on Wilkinson combiner and transformer have been mainly adopted [6][7][8][9] to overcome power limitation of a CMOS UA. For Silicon based process such as CMOS or SiGe, multiple metal-layer options enable the usage of distributed active transformers (DAT) that can accomplish both impedance matching and power combining.…”