Complementary Ring Oscillator Exclusively Prepared by Means of Gravure and Flexographic Printing

Kempa, H.; Hambsch, Mike; Reuter, K.; Stanel, Michael; Schmidt, G.; Meier, Barbara; Hübler, Arved C.

doi:10.1109/ted.2011.2153856

Cited by 83 publications

(52 citation statements)

References 13 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…S7). In comparison, other patterning methods used to create patterned OSCs for isolated OTFTs have shown relative variances ranging from 20% to 84% (9,15,17,22,31,32,35,42,(48)(49)(50)(51)(52)(53)(54). For example, Li et al (15) have shown that using a PMMA:C8BTBT blend on a solution wetting pattern can deposit crystal plates that have a mobility relative variance of >40%.…”

Section: Resultsmentioning

confidence: 99%

Large-area formation of self-aligned crystalline domains of organic semiconductors on transistor channels using CONNECT

Park

Giri

Shaw

et al. 2015

Proc. Natl. Acad. Sci. U.S.A.

View full text Add to dashboard Cite

The electronic properties of solution-processable small-molecule organic semiconductors (OSCs) have rapidly improved in recent years, rendering them highly promising for various low-cost largearea electronic applications. However, practical applications of organic electronics require patterned and precisely registered OSC films within the transistor channel region with uniform electrical properties over a large area, a task that remains a significant challenge. Here, we present a technique termed "controlled OSC nucleation and extension for circuits" (CONNECT), which uses differential surface energy and solution shearing to simultaneously generate patterned and precisely registered OSC thin films within the channel region and with aligned crystalline domains, resulting in low device-to-device variability. We have fabricated transistor density as high as 840 dpi, with a yield of 99%. We have successfully built various logic gates and a 2-bit halfadder circuit, demonstrating the practical applicability of our technique for large-scale circuit fabrication.organic semiconductors | patterning | small molecules | transistors | circuits

show abstract

Section: Resultsmentioning

confidence: 99%

Large-area formation of self-aligned crystalline domains of organic semiconductors on transistor channels using CONNECT

Park

Giri

Shaw

et al. 2015

Proc. Natl. Acad. Sci. U.S.A.

View full text Add to dashboard Cite

show abstract

“…In the context of the reported literature these represent state-of-the-art values for solution-processed organic devices fabricated on plastic foil. [12][13][14][15][16][17][18][19][20][21] This is achieved without the need for a rigid substrate, using solution-processed dielectric and semiconductor, and is regardless of the relatively low effective mobility of these devices ( µ sat = 0.03-0.06 cm 2 V −1 s −1 ), highlighting the impact and importance of self-aligned, low stray capacitance architecture on device performance.…”

Section: Maximum Device Switching Speedmentioning

confidence: 97%

“…Only a handful of reports on OFET alternating current (AC) characterization use fabrication techniques that even partially fulfi l the requirements set out above. [12][13][14][15][16][17][18][19][20][21][22][23] However to build functional fl exible circuits it is important to understand how to reconcile device fabrication and performance. [24][25][26] This is a requirement if plastic electronics are to be implemented in applications such as radio frequency identifi cation (RFID) tags which operate at megahertz frequencies.…”

Section: Doi: 101002/aelm201500024mentioning

confidence: 99%

Self‐Aligned Megahertz Organic Transistors Solution‐Processed on Plastic

Higgins

Muir

Wade

et al. 2015

Adv Elect Materials

View full text Add to dashboard Cite

The processing of complex nanoscale electronic structures on plastic substrates is a significant challenge, requiring the combination of low temperature, nonaggressive, and high resolution methods. Here a scalable process flow on plastic is presented tbat enables the fabrication of flexible nanoimprinted organic field‐effect transistors (OFETs) with self‐aligned contacts and solution‐processed semiconductor and dielectric layers, at processing temperatures ≤ 150 °C. OFETs are fabricated with device cutoff frequencies f > 1 MHz at low operating bias V DS = −15 V. The technique allows the patterning of metal structures over four orders of magnitude from 375 nm to 1 mm without the need for a rigid carrier, and provides a fabrication pathway to high performance nanostructured organic circuitry.

show abstract

“…[5] It facilitates high-speed, large-area printing and allows the patterning of multiple structures in parallel, providing a high-throughput solution. Gravure printing has already been demonstrated as viable for the manufacture of organic field-effect transistors (OFETs), [6][7][8] organic light-emitting diodes (OLEDs), [9] and other components vital for the development of flexible printed electronics. [10,11] To fully realize these devices, organic semiconductors that are both compatible with printing and yield robust electrical characteristics are required.…”

Section: Introductionmentioning

confidence: 99%

Indacenodithiophene-benzothiadiazole organic field-effect transistors with gravure-printed semiconductor and dielectric on plastic

et al. 2015

View full text Add to dashboard Cite

We demonstrate the gravure printing of a high-performance indacenodithiophene (IDT) copolymer, indacenodithiophene-benzothiadiazole (C 16 IDT-BT), onto self-aligned organic field-effect transistor architectures on flexible plastic substrates. We observed that the combination of a gravure-printed dielectric with gravure-printed semiconductor yielded devices with higher mean-effective mobility than devices manufactured using photolithographically patterned dielectric. Peak mobilities of μ = 0.1 cm 2 V −1 s −1 were measured, and exceed previous reports for non-printed C 16 IDT-BT on non-flexible silicon substrates.

show abstract

Complementary Ring Oscillator Exclusively Prepared by Means of Gravure and Flexographic Printing

Cited by 83 publications

References 13 publications

Large-area formation of self-aligned crystalline domains of organic semiconductors on transistor channels using CONNECT

Large-area formation of self-aligned crystalline domains of organic semiconductors on transistor channels using CONNECT

Self‐Aligned Megahertz Organic Transistors Solution‐Processed on Plastic

Indacenodithiophene-benzothiadiazole organic field-effect transistors with gravure-printed semiconductor and dielectric on plastic

Contact Info

Product

Resources

About