Indacenodithiophene-benzothiadiazole organic field-effect transistors with gravure-printed semiconductor and dielectric on plastic

Higgins, Stuart G.; Muir, Beinn V. O.; Heeney, Martin; Campbell, Alasdair J.

doi:10.1557/mrc.2015.66

Cited by 6 publications

(3 citation statements)

References 35 publications

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“…[15][16][17] Conti et al inkjet printed ultrathin dielectric films, 30-50 nm, of crosslinked PVP in transistors by degassing the samples in vacuum prior to curing. [6,24,27] In this paper, we focused on printing dielectric films as thin as 70 nm in OFETs patterned via photolithography. For instance, hybrid organic-inorganic self-assembled multilayers, 2-14 nm thick, made of alternating layers of ZrO 2 and organic self-assembled monolayer exhibited 10-100 nA mm −2 leakage current in capacitors.…”

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confidence: 99%

Gravure Printed Ultrathin Dielectric for Low Voltage Flexible Organic Field‐Effect Transistors

Vaklev

Steinke

Campbell

2019

Adv Materials Inter

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Dielectrics are a critical element of all electronic devices, being used not only directly in the gate layer of transistors, but also as insulators separating conducting interconnects, as well as passivation/protective layers. Crosslinkable and polymeric organic dielectrics can form large-area, highly uniform, and smooth films, which are highly flexible and solution processable, strong advantages for their use in flexible organic electronics. However, for the most challenging application of the gate dielectric, any material must ideally enable the formation of functional and stable films of thickness > 100 nm. This is driven by two requirements. First, low voltage operation, typically > 5 V, is due to the battery supply in portable applications along with integration of inputs and outputs with silicon based complementary metal-oxide-semiconductor (CMOS) technology. For some biomedical sensors, there is the additional constraint of the electrochemical window of water (1 V). Second, the channel length L to dielectric thickness d ratio required to achieve transistor saturation (typically L/d >> 10) is a requirement for use in digital logic applications. Short channel lengths are needed for high frequency operation, and hence with the resolution limit of conventional photolithography being of order of micrometers, dielectric thickness needs to scale accordingly into the sub-100 nm range.There has been considerable activity toward the development of printed organic field effect transistors (OFETs). Hubler and Ellinger published three reports on fully printed transistors on foil, [3][4][5] where they used only additive techniques such as screen, gravure, and flexographic printing to fabricate piezoelectric loudspeakers based on transistors in a roll-to-roll process. Miniaturization of transistor devices using roll-to-roll compatible methods for fabrication has also been another important trend over the last couple of years. Vilkman et al. demonstrated the complete roll-to-roll manufacturing of self-aligned transistors with 25-70 µm channel lengths. [1] The authors used a combination of flexography, gravure printing, metal evaporation combined with lift-off and photolithography to produce ≈80 m of plastic foil with thousands of devices. Higgins et al. used printing and nanoimprint lithography to fabricate selfaligned transistors and inverters with sub-micrometer channel length in a batch process. [6] The dielectric and semiconductors were deposited with forward gravure and/or inkjet printing. Kang et al. scaled transistor dimensions by gravure printing 10 µm lines for gate electrodes with self-aligned source-drain electrodes. [7] Park et al. reported printing silver electrodes in Organic electronics requires dielectrics which can be processed over large areas at low temperature in ambient using simple solution based techniques. Here a crosslinkable acrylate-based organic dielectric is reported, which is gravure printable on plastic substrates, patternable by conventional photolithography, and can form electrically funct...

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confidence: 99%

Gravure Printed Ultrathin Dielectric for Low Voltage Flexible Organic Field‐Effect Transistors

Vaklev

Steinke

Campbell

2019

Adv Materials Inter

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“…[ 31 ] Gravure printing of the polymer has allowed for scaling up; however, the resulting field‐effect mobilities were disappointingly low, at ≈10 −1 cm 2 V −1 s −1 . [ 32 ] In this work, we fabricated IDTBT OFETs on flexible substrates as large as 10 cm × 10 cm and containing over 1000 devices. After extensive optimization in device processing, an average charge carrier mobility of μ avg = 0.95 ± 0.21 cm 2 V −1 s −1 , and a maximum of μ max = 2.3 cm 2 V −1 s −1 , with a very narrow distribution in performance were recorded.…”

Section: Figurementioning

confidence: 99%

Large‐Area Uniform Polymer Transistor Arrays on Flexible Substrates: Towards High‐Throughput Sensor Fabrication

Zeidell

Filston

Waldrip

et al. 2020

Adv Materials Technologies

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Solution‐processable organic semiconductors can serve as the basis for new products including rollable displays, tattoo‐like smart bandages for real‐time health monitoring, and conformable electronics integrated into clothing or even implanted in the human body. For such exciting commercial applications to become a reality, good device performance and uniformity over large areas are necessary. The design of new materials has progressed at an astonishing pace, but accessing their intrinsic, efficient electrical properties in large‐area flexible device arrays is difficult. The development of protocols that allow integration with industrial‐scale processing for high‐throughput manufacturing, without the need to compromise on performance, is the key for transitioning these materials to real‐life applications. In this work, large‐area arrays of organic thin‐film transistors obtained by spray‐coating the high‐mobility polymer indacenodithiophene‐co‐benzothiadiazole (IDTBT) are demonstrated. A maximum charge carrier mobility of 2.3 cm2 V−1 s−1, with a very narrow performance distribution, is obtained over surface areas of 10 cm × 10 cm. The devices retain their electrical properties when bent multiple times and at different curvatures. In addition, large arrays of highly sensitive (0.25% change in mobility for 1% humidity variation), reusable, near‐identical humidity sensors are produced in a one‐step fabrication and calibrated from 0% to 94% relative humidity.

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“…In particular for boosting the speed of operation it is crucial to improve not only the transconductance, but to simultaneously minimize the parasitic capacitance due to interlayer electrode overlaps, i.e., geometric overlaps between source/drain and gate electrode 8 9 10 . Considering that self-alignment patterning techniques 11 12 13 14 15 approach the limit of nearly zero overlap 9 10 the questions arises, how OTFTs operate if structuring techniques cause the formation of a small gap between the gate and source electrode rather than an overlap. This apparently technology-driven question attains, in fact, fundamental importance when considering a crucial aspect in which OTFTs differ from their inorganic counterparts: The operation of thin-film transistors relies on controlling the current via accumulation of charges at the semiconducting-insulator interface due to a gate-source bias.…”

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Switching from weakly to strongly limited injection in self-aligned, nano-patterned organic transistors

Zojer

Rothländer

Kraxner

et al. 2016

Sci Rep

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Organic thin-film transistors for high frequency applications require large transconductances in combination with minimal parasitic capacitances. Techniques aiming at eliminating parasitic capacitances are prone to produce a mismatch between electrodes, in particular gaps between the gate and the interlayer electrodes. While such mismatches are typically undesirable, we demonstrate that, in fact, device structures with a small single-sided interlayer electrode gap directly probe the detrimental contact resistance arising from the presence of an injection barrier. By employing a self-alignment nanoimprint lithography technique, asymmetric coplanar organic transistors with an intentional gap of varying size (< 0.2 μm) between gate and one interlayer electrode are fabricated. An electrode overlap exceeding 1 μm with the other interlayer has been kept. Gaps, be them source or drain-sided, do not preclude transistor operation. The operation of the device with a source-gate gap reveals a current reduction up to two orders of magnitude compared to a source-sided overlap. Drift-diffusion based simulations reveal that this marked reduction is a consequence of a weakened gate-induced field at the contact which strongly inhibits injection.

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Indacenodithiophene-benzothiadiazole organic field-effect transistors with gravure-printed semiconductor and dielectric on plastic

Cited by 6 publications

References 35 publications

Gravure Printed Ultrathin Dielectric for Low Voltage Flexible Organic Field‐Effect Transistors

Gravure Printed Ultrathin Dielectric for Low Voltage Flexible Organic Field‐Effect Transistors

Large‐Area Uniform Polymer Transistor Arrays on Flexible Substrates: Towards High‐Throughput Sensor Fabrication

Switching from weakly to strongly limited injection in self-aligned, nano-patterned organic transistors

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