Complete HVPE experimental investigations: Cartography of SAG GaN towards quasi-substrates or nanostructures

Chelda-Gourmala, O.; Trassoudaine, Agnès; André, Yves-Bernard; Bouchoule, S.; Gil, Evelyne; Tourret, J.; Castelluci, Dominique; Cadoret, R.

doi:10.1016/j.jcrysgro.2010.02.020

Cited by 15 publications

(5 citation statements)

References 35 publications

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“…GaN NWs were grown in a 2 in horizontal home-designed HVPE reactor at atmospheric pressure, heated by a six zone furnace [23][24][25]. In a first upward zone, GaCl vapor species were formed by reacting gaseous HCl with liquid gallium at 800 • C. Index (g) indicates gaseous molecules.…”

Section: Experimental Featuresmentioning

confidence: 99%

Catalyst-assisted hydride vapor phase epitaxy of GaN nanowires: exceptional length and constant rod-like shape capability

et al. 2012

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The hydride vapor phase epitaxy (HVPE) process exhibits unexpected properties when growing GaN semiconductor nanowires (NWs). With respect to the classical well-known methods such as metal organic vapor phase epitaxy and molecular beam epitaxy, this near-equilibrium process based on hot wall reactor technology enables the synthesis of nanowires with a constant cylinder shape over unusual length. Catalyst-assisted HVPE shows a record short time process (less than 20 min) coupled to very low precursor consumption. NWs are grown at a fast solidification rate (50 μm h(-1)), facilitated by the high decomposition frequency of the chloride molecules involved in the HVPE process as element III precursors. In this work growth temperature and V/III ratio were investigated to determine the growth mechanism which led to such long NWs. Analysis based on the Ni-Ga phase diagram and the growth kinetics of near-equilibrium HVPE is proposed.

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Section: Experimental Featuresmentioning

confidence: 99%

Catalyst-assisted hydride vapor phase epitaxy of GaN nanowires: exceptional length and constant rod-like shape capability

et al. 2012

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“…10 It is well-recognized that for both PE and epitaxial lateral overgrowth (ELO) of GaN, different side facets may appear depending on growth conditions and/or shape and orientation of GaN "seeds." 10,11 In particular, different vertical and slanted facets are observed in both MOVPE and HVPE ELO of GaN if the stripe mask patterns are aligned along the h1 100i or h11 20i direction. However, our overgrowth procedure always yielded {1 101} facets, even for the roundshaped pillars (leftmost image in Fig.…”

Section: -mentioning

confidence: 99%

Large-area GaN n-core/p-shell arrays fabricated using top-down etching and selective epitaxial overgrowth

Krylyuk

Paramanik

King

et al. 2012

Applied Physics Letters

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We present large-area, vertically aligned GaN n-core and p-shell structures on silicon substrates. The GaN pillars were formed by inductively coupled plasma etching of lithographically patterned n-GaN epitaxial layer. Mg-doped p-GaN shells were formed using selective overgrowth by halide vapor phase epitaxy. The diameter of the cores ranged from 250 nm to 10 lm with varying pitch. The p-shells formed truncated hexagonal pyramids with {1 101} side-facets. Room-temperature photoluminescence and Raman scattering measurements indicate strain-relaxation in the etched pillars and shells. Cross-sectional transmission electron microscopy revealed dislocation bending by 90 at the core-shell interface and reduction in their density in the shells. V

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“…3,4 The growth mode also can be changed via V/III ratio control. 5,6 Given the current paucity of research investigating the interrelation of stress, V/III ratio and crystal growth, this paper reports our efforts to identify and understand these relationships.…”

Section: Introductionmentioning

confidence: 99%

Influence of V/III ratio on stress control in GaN grown on different templates by hydride vapour phase epitaxy

Dai

Shao

et al. 2014

RSC Adv.

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GaN crystals were grown on MOCVD-GaN/Al 2 O 3 templates (MGA) and MOCVD-GaN/6H-SiC templates (MGS) in a hydride vapour phase epitaxy (HVPE) process where the V/III ratio was controlled. The tensile stress that exists in MGS was controlled by an increasing V/III ratio. The compressive stress that appears in MGA was controlled by a decreasing V/III ratio. The mechanism of stress control using the V/III ratio is discussed in terms of the interrelation of the stress, the V/III ratio and the crystal growth. The stress in these two kinds of substrates causes differences in atomic mobility which may be compensated by varying the V/III ratio. It is found that a larger V/III ratio results in a higher atomic mobility. Thus, atomic mobility is retarded by compressive stress and increased by tensile stress. This method of stress control has been shown to provide worthwhile guidance for GaN growth on different templates, and under different conditions in other investigations.

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Complete HVPE experimental investigations: Cartography of SAG GaN towards quasi-substrates or nanostructures

Cited by 15 publications

References 35 publications

Catalyst-assisted hydride vapor phase epitaxy of GaN nanowires: exceptional length and constant rod-like shape capability

Catalyst-assisted hydride vapor phase epitaxy of GaN nanowires: exceptional length and constant rod-like shape capability

Large-area GaN n-core/p-shell arrays fabricated using top-down etching and selective epitaxial overgrowth

Influence of V/III ratio on stress control in GaN grown on different templates by hydride vapour phase epitaxy

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