Complete sliced model of microwave FET's and comparison with lumped model and experimental results

Abdipour, A.; Pacaud, A.

doi:10.1109/22.481378

Cited by 47 publications

(27 citation statements)

References 24 publications

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“…5. The element values used in the distributed model are given in Tables 1 and 2 [10]. The scattering parameters of this transistor are calculated over a frequency range of 20-220 GHz using fully distributed and slice models from the time domain analysis and are drawn in Fig.…”

Section: Numerical Resultsmentioning

confidence: 99%

“…Although, some efficient numerical methods have been recently proposed for simulation time reduction [5][6][7][8][9], but it sounds that this analysis approach needs more attention for implementing in simulation software. On the other hand, device behavior in high frequencies can be well described using semi-distributed model which can be easily implemented in CAD routines of simulators [9][10][11][12]. But the semi-distributed model cannot consider wave propagation effect and phase cancellation on the electrical performance of the device [2].…”

Section: Introductionmentioning

confidence: 99%

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Time Domain Analysis of Active Transmission Line Using FDTD Technique (Application to Microwave/Mm- Wave Transistors)

Afrooz¹,

Abdipour²,

Tavakoli³

et al. 2007

PIER

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Abstract-In this paper, an accurate modeling procedure for GaAs MESFET as active coupled transmission line is presented. This model can consider the effect of wave propagation along the device electrodes. In this modeling technique the active multiconductor transmission line (AMTL) equations are obtained, which satisfy the TEM wave propagation along the GaAs MESFET electrodes. This modeling procedure is applied to a GaAs MESFETs by solving the AMTL equations using Finite-Difference Time-Domain (FDTD) technique. The scattering parameters are computed from time domain results over a frequency range of 20-220 GHz. This model investigates the effect of wave propagation along the transistor more accurate than the slice model, especially at high frequencies.

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Section: Numerical Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Time Domain Analysis of Active Transmission Line Using FDTD Technique (Application to Microwave/Mm- Wave Transistors)

Afrooz¹,

Abdipour²,

Tavakoli³

et al. 2007

PIER

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show abstract

“…In this method all passive and active transmission lines are divided into infinite segments and then by considering the proper equivalent circuit for each segment, the required equations for analysis of the whole circuit can be obtained. Sliced analysis is another approach in which the number of segments is finite and unlike the distributed analysis cannot consider the wave propagation effect of the elements [8].…”

Section: Introductionmentioning

confidence: 99%

Nonlinear distributed analysis of traveling wave amplifier in CMOS technology using FDTD method

Daneshmandian

Abdipour

Mirzavand

2016

Analog Integr Circ Sig Process

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An efficient modeling and analysis method of a traveling wave amplifier based on transmission line models of active and passive elements is presented. In this approach, each MOS transistors of the amplifier is modeled as a nonlinear active three-conductor transmission line. Also, by considering the transmission line model of other passive elements of the amplifier, the nonlinear describing equations of the circuit are obtained. The proposed modeling method is applied to a traveling wave amplifier consisting of four MOSFETs in 130 nm CMOS process, and then the whole amplifier is simulated using the FiniteDifference Time-Domain (FDTD) technique. The results of this analysis are attained at the frequency range of 22-34 GHz in terms of small and large signals and compared with sliced analysis and a commercial simulator. It is shown that at high frequencies, where the dimensions of the circuit elements become on the order of the wavelength, the results of these analysis approaches are quite different and our proposed distributed method is more accurate than sliced analysis.

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“…Many works have been published to characterize effects of field propagation along device fingers, using either distributed models [1][2], or semi-distributed models [3][4][5]. Those works concentrate on the effects of propagation along fingers.…”

Section: Introductionmentioning

confidence: 99%

Combination of Circuit and Full Wave Analysis for Pre-Matched Multifinger FET

Cetiner

Coccioli

Housmand

et al. 2000

30th European Microwave Conference, 2000

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Complete sliced model of microwave FET's and comparison with lumped model and experimental results

Cited by 47 publications

References 24 publications

Time Domain Analysis of Active Transmission Line Using FDTD Technique (Application to Microwave/Mm- Wave Transistors)

Time Domain Analysis of Active Transmission Line Using FDTD Technique (Application to Microwave/Mm- Wave Transistors)

Nonlinear distributed analysis of traveling wave amplifier in CMOS technology using FDTD method

Combination of Circuit and Full Wave Analysis for Pre-Matched Multifinger FET

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