Complete solid state lighting (SSL) line at CEA LETI

Robin, I. C.; Ferret, P.; Bougerol, Catherine; Salomon, Damien; Chen, X. J.; Charles, Matthew; Tchoulfian, Pierre; Gasse, A.; Lagrange, Alexandre; Consonni, Marianne; Bono, H.; Lévy, François; Désières, Y.; Aitmani, Abdenacer; Makram-Matta, S.; Bialic, Emilie; Gorrochategui, P.; Mendizabal, L.

doi:10.1117/12.2060514

Cited by 3 publications

(2 citation statements)

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“…Though the conventional GaN LEDs use InGaN/GaN MQWs, Silvaco TCAD simulation result shows that if GaN is replaced by In 0.05 Ga 0.95 N for the barrier and in the n-side of the structure, homogenous radiative rate and more homogeneous repartition of carriers can be achieved compared to the structure with GaN in the n-side and GaN barriers in the MQWs [3]. To address the problem of strain induced piezoelectric field, it is necessary to make the structure relaxed, however, relaxation of buffer and MQW could cause threading dislocations and stacking faults which behave as non-radiative recombination centers as also observed in the InGaN/GaN super lattice prelayer study of W.C. Lai et al [4].…”

Section: Introductionmentioning

confidence: 99%

Emission wavelength red-shift by using “semi-bulk” InGaN buffer layer in InGaN/InGaN multiple-quantum-well

Alam

Gmili

et al. 2017

Superlattices and Microstructures

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Section: Introductionmentioning

confidence: 99%

Emission wavelength red-shift by using “semi-bulk” InGaN buffer layer in InGaN/InGaN multiple-quantum-well

Alam

Gmili

et al. 2017

Superlattices and Microstructures

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“…Semiconductor optoelectronic devices (e.g. LEDs, laser diodes etc) have a vast area of application other than general lighting, such as automotive headlights, the light source for traffic signals, full-color illumination for backlighting for liquid-crystal displays, decoration lights, street lights [3], underwater marine communication, and also for healthcare, plants research, high-speed communication such as Li-Fi [4]. Currently, the most common way to produce a white light spectrum from LEDs is using a blue LED with a yellow phosphor coating.…”

Section: Introductionmentioning

confidence: 99%

Investigating defects in InGaN based optoelectronics: from material and device perspective

Nag

Bhunia²,

Sarkar³

et al. 2023

Mater. Res. Express

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III-nitride optoelectronics have revolutionized solid-state lighting technology. However, non-radiative defects play a major bottleneck in determining the performance of InGaN-based optoelectronics devices. It becomes especially challenging when high indium is required to be incorporated to obtain emission at higher wavelength (>500 nm). In this review article, we are going to discuss our investigation on the origin of defects in InGaN-based optoelectronics devices from the material and device perspective and characterize them through various techniques. This article broadly consists of two parts. In the first part, we investigate defects in InGaN based optoelectronics from a material point of view. Here, we discuss the challenges in the growth of InGaN planar (2-dimensional) and nanowires (1-dimensional) with high indium (≥20%) incorporation using the plasma-assisted molecular beam epitaxy (PA-MBE) technique. Photoluminescence spectroscopy (PL) has been performed to characterize these grown samples to assess their optical quality. Atomic force microscopy (AFM) has been employed to characterize the surface morphology of grown InGaN layers. High-resolution transmission electron microscopy (HRTEM) and scanning electron microcopy (SEM) are also used to characterize InGaN planar and nanowire samples grown under various process conditions. In the second part, we investigate the role of defects on InGaN optoelectronics from a device point of view. Here, we discuss the fabrication of InGaN multi-quantum well-based light emitting diodes (LEDs). Temperature-dependent current vs. voltage measurements are carried out to investigate the role of defects on carrier dynamics under forward and reverse bias conditions. Frequency-dependent capacitance vs. voltage (CV) and conductance vs. voltage (GV) techniques are employed extensively to characterize defects in fabricated InGaN LEDs.

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Impact of Strain on the Electronic and Optoelectronic Properties of III-Nitride Semiconductor Heterostructures

Nag

Laha

2023

Strain Engineering in Functional Materials and Devices

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III-nitride materials are technologically important material for optoelectronic devices, due to the direct bandgap and tunability of composition over a wide wavelength region (200–700 nm). In addition, III-nitride-based transistors, e.g., high electron mobility transistors (HEMT) have recently paved their way towards application for high-frequency (RF) and high-power devices. The unavailability of large-area III-nitride substrates leads to employing heteroepitaxial growth on foreign substrates. Lattice mismatch with substrates such as Sapphire, SiC, Si causes mechanical strain in the growing layer. Accumulated strain in heteroepitaxial growth can result in non-radiative dislocations in structure, thus lower efficiency in light-emitting diodes (LEDs). Another negative effect of strain in quantum wells (QWs) is compositional pulling, attempting to minimize the incorporation of indium/aluminum in GaN during heteroepitaxial growth. In this chapter, the origin of strain and its impact on mechanical and electrical properties of III-Nitrides are discussed from the perspective of epitaxial thin-film growth.

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Complete solid state lighting (SSL) line at CEA LETI

Cited by 3 publications

References 0 publications

Emission wavelength red-shift by using “semi-bulk” InGaN buffer layer in InGaN/InGaN multiple-quantum-well

Emission wavelength red-shift by using “semi-bulk” InGaN buffer layer in InGaN/InGaN multiple-quantum-well

Investigating defects in InGaN based optoelectronics: from material and device perspective

Impact of Strain on the Electronic and Optoelectronic Properties of III-Nitride Semiconductor Heterostructures

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