Emission wavelength red-shift by using “semi-bulk” InGaN buffer layer in InGaN/InGaN multiple-quantum-well

The dependence of the emission from MQWs on the indium content in the underlying InGaN templates: experimental and modeling results

“…This has been previously reported for bulk InGaN films [1,[25][26][27] and we have previously reported it for InGaN SB [10,11]. Recent reports on composition pulling in QWs due to strain reduction has also been reported [8,28].…”

Nanomaterial Integration in Micro LED Technology: Enhancing Efficiency and Applications

“…Another important aspect is hydrogen plasma treatment, which deactivates Mg acceptors around the device mesa, raising peak EQE in green micro-LEDs [131]. Solutions to the lattice mismatch in InGaN alloys between GaN and InN include V-pits, n-GaN buffer layers, superlattices, pseudo-substrates, and Smart Cut™ technology [98,[132][133][134]. It has been demonstrated that V-pits, thick n-GaN buffer layers, superlattices, and partial decomposition of InGaN underlayers are effective approaches to address the issue of efficient red emission.…”

“…It has been demonstrated that V-pits, thick n-GaN buffer layers, superlattices, and partial decomposition of InGaN underlayers are effective approaches to address the issue of efficient red emission. This may allow EQE to go beyond 1%, although this strategy is still faced with challenges involving defects [98,[132][133][134]. V-pits, V-shaped recesses that can form on the surface of GaN semiconductors during growth, are part of strategies to optimise the performance and reliability of GaN-based devices, such as high-electron-mobility transistors (HEMTs).…”