Influence of well position on the electroluminescence characteristics of InGaN/GaN single quantum well red light-emitting diodes

Zhang, Shuyuan; Liu, Wei; Zhang, Jie; Zhao, Hengyan; Liu, Zeyu; Hu, Zhangbo

doi:10.1016/j.jlumin.2022.119090

Cited by 3 publications

(2 citation statements)

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“…The electron and hole quantum potential correction factors were set as 0.7 and 1, respectively. Other parameters were default and can be found elsewhere [7,42].…”

Section: Device Structures and Simulation Parametersmentioning

confidence: 99%

“…In recent decades, InGaN-based blue and green LEDs have been widely investigated and achieved high external quantum efficiency (EQE) [6]. However, the research on InGaNbased red LEDs is still insufficient, especially for red µLEDs, which impedes the monolithic integration for full-color µLED displays [7]. Moreover, the common AlGaInP-based red LEDs suffer from severe efficiency droop as size decreases and are sensitive to operation temperature [8,9].…”

Section: Introductionmentioning

confidence: 99%

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Performance Improvement of InGaN-Based Red Light-Emitting Diodes via Ultrathin InN Insertion Layer

Zhou

Shi

et al. 2023

Photonics

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The serious separation of electron–hole wavefunctions, which is caused by the built-in electric field, prevents electron–hole radiative recombination in quantum wells (QWs) in high-In-content InGaN-based red light-emitting diodes (LEDs). Here, we propose a staggered structure that inserts an ultrathin InN layer in the single quantum well (SQW) to reduce the piezoelectric polarization and suppress the quantum confined Stark effect (QCSE). We have numerically simulated the effects of SQW with the InN insertion layer (IL) on the energy band structure and electron–hole wavefunctions of the red LED. Owing to alleviated piezoelectric polarization and improved overlaps of electron–hole wavefunctions, the simulation results have revealed that the internal quantum well (IQE) of the red LED with InN IL exhibits 42% higher than that of the red LED with a square-shaped QW (SSQW) at 60 A/cm2, and the efficiency droop ratio of red LED with InN IL is 48% lower than that of red LEDs with SSQW. Furthermore, we have found that the position of InN IL can affect the energy states of carriers, which has a great influence on the IQE and peak emission wavelength of red LEDs.

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“…The electron and hole quantum potential correction factors were set as 0.7 and 1, respectively. Other parameters were default and can be found elsewhere [7,42].…”

Section: Device Structures and Simulation Parametersmentioning

confidence: 99%