Complete transient simulation of flash EEPROM devices

Keeney, S.; Piccinini, F.; Morelli, Marco; Mathewson, A.; Lombardi, C.; Bez, R.; Ravazzi, L.; Cantarelli, D.

doi:10.1109/iedm.1990.237193

Cited by 14 publications

(4 citation statements)

References 8 publications

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“…The Fowler–Nordheim tunneling in the HfO 2 interlayer current is defined as J normalF normalN = F α , normale E 2 .25em exp ( − F β , e E ) where E specifies the oxide electric field and F α,e and F β,e are parameters. Furthermore, the considered geometrical meshing is presented in Figure .…”

Section: Methodsmentioning

confidence: 99%

Reduction of Fermi-Level Pinning and Controlling of Ni/β-Ga₂O₃ Schottky Barrier Height Using an Ultrathin HfO₂ Interlayer

Labed

Min

et al. 2023

ACS Appl. Electron. Mater.

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Achieving precise control of the Schottky barrier height and minimizing Fermi-level pinning effect are crucial factors in designing high-performance Schottky barrier diodes. In this work, the effect of insertion of HfO2 with different cycle numbers on forward current, capacitance, and Ni/HfO2/β-Ga2O3 Schottky barrier height is discussed. First, we observed that Schottky barrier heights extracted from capacitance (ϕB CV) were adjusted in the range of 0.54–1.33 eV, in which it was increased by repeated atomic layer deposition cycles from two to eight. In addition, with increasing HfO2 cycle numbers, the Schottky barrier height became similar to an ideal value, which means the Fermi pinning level effect is reduced. The effects of HfO2 cycle numbers on forward current and on the extracted Schottky barrier height (ϕB JV) were analyzed. We observed that, the forward current was highly dependent on the HfO2 cycle number. Schottky barrier height (ϕB JV) can be controlled easily in a wide range domain from 1.05 to 1.48 eV by increasing HfO2 cycle numbers.

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Section: Methodsmentioning

confidence: 99%

Reduction of Fermi-Level Pinning and Controlling of Ni/β-Ga₂O₃ Schottky Barrier Height Using an Ultrathin HfO₂ Interlayer

Labed

Min

et al. 2023

ACS Appl. Electron. Mater.

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“…Polarization models were taken into account due to the strong spontaneous and piezoelectric polarization effects of nitride semiconductors [27]. The Fowler-Nordheim tunneling model was used to treat the tunnel effect [28]. Parallel electric field model was adopted to model velocity saturation effect and all calculations are based on the Fermi-Dirac statistics [29].…”

Section: Modelsmentioning

confidence: 99%

“…The off-state gate leakage can be ascribed to the tunnel current, as the strength of electric field of the device is high and the Ga 2 O 3 layer is sufficiently thin. This tunneling of carriers in the presence of high electric field is described by the well-known Fowler-Nordheim equation [28]:…”

Section: Effect Of Gate Work Functions On the Gate Breakdown And Off-...mentioning

confidence: 99%

Effects of gate work function on E-mode AlGaN/GaN HEMTs with stack gate β-Ga₂O₃/p-GaN structure

Zhu

et al. 2021

J. Phys. D: Appl. Phys.

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This research investigates electrical properties of E-mode AlGaN/GaN HEMTs with n-type β-Ga2O3/p-GaN gate stack under different gate work functions of 4.6, 5.1 and 5.7 eV, respectively. The simulated results show that the device with gate work function of 5.7 eV exhibits the largest threshold voltage of 2.8 V while having the lowest saturation drain current of 0.15 A mm−1, which can be ascribed to the device having the highest Schottky barrier, leading to the least electrons collected at the AlGaN/GaN interface. Moreover, the device with gate work function of 5.7 eV shows the largest gate breakdown voltage as well as the lowest off-state gate leakage, which can be attributed to the least strength of electric field in the Ga2O3 layer. Additionally, the Fowler–Nordheim equation was used to study the mechanisms of off-state leakage.

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“…5). Based on the model calculation 18) of tunneling current (Fig. 2), the ratio of hole current to electron current increases with large gate bias, and only the hole tunneling current can contribute the light emission.…”

mentioning

confidence: 99%

The Roughness-Enhanced Light Emission from Metal-Oxide-Silicon Light-Emitting Diodes Using Very High Vacuum Prebake

Lee

Chen

Lai

et al. 2002

Jpn. J. Appl. Phys.

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The oxide roughness of metal-oxide-silicon diodes can be intentionally controlled by the very high vacuum pre-bake and the growth conditions during rapid thermal oxidation. Both surface and Si/oxide interface have the similar magnitude of roughness measured by atomic force microscopy, indicating the conformal growth of oxide. At accumulation bias (positive gate bias), the holes tunnel from gate electrode to n-type Si through the ultrathin oxide, and recombine with the electrons in the accumulation region radiatively if phonon scattering and roughness scattering provide the necessary momentum. The light emission intensity increases with increasing oxide roughness. Strong electroluminescence with an external quantum efficiency of ∼ 2 × 10 −6 at room temperature was observed from a rough metal-oxide-silicon tunneling diode.

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Complete transient simulation of flash EEPROM devices

Cited by 14 publications

References 8 publications

Reduction of Fermi-Level Pinning and Controlling of Ni/β-Ga₂O₃ Schottky Barrier Height Using an Ultrathin HfO₂ Interlayer

Reduction of Fermi-Level Pinning and Controlling of Ni/β-Ga₂O₃ Schottky Barrier Height Using an Ultrathin HfO₂ Interlayer

Effects of gate work function on E-mode AlGaN/GaN HEMTs with stack gate β-Ga₂O₃/p-GaN structure

The Roughness-Enhanced Light Emission from Metal-Oxide-Silicon Light-Emitting Diodes Using Very High Vacuum Prebake

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Complete transient simulation of flash EEPROM devices

Cited by 14 publications

References 8 publications

Reduction of Fermi-Level Pinning and Controlling of Ni/β-Ga2O3 Schottky Barrier Height Using an Ultrathin HfO2 Interlayer

Reduction of Fermi-Level Pinning and Controlling of Ni/β-Ga2O3 Schottky Barrier Height Using an Ultrathin HfO2 Interlayer

Effects of gate work function on E-mode AlGaN/GaN HEMTs with stack gate β-Ga2O3/p-GaN structure

The Roughness-Enhanced Light Emission from Metal-Oxide-Silicon Light-Emitting Diodes Using Very High Vacuum Prebake

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About

Reduction of Fermi-Level Pinning and Controlling of Ni/β-Ga₂O₃ Schottky Barrier Height Using an Ultrathin HfO₂ Interlayer

Reduction of Fermi-Level Pinning and Controlling of Ni/β-Ga₂O₃ Schottky Barrier Height Using an Ultrathin HfO₂ Interlayer

Effects of gate work function on E-mode AlGaN/GaN HEMTs with stack gate β-Ga₂O₃/p-GaN structure