Complex-Coupled DFB Laser Using a Buried SiO$_{2}$ Grating

Integratable and High Speed Complex-Coupled MQW-DFB Lasers Fabricated on Semi-Insulating Substrates

“…[10,11] It is difficult to realize a pure gain-or loss-coupling structure because of material growth, processing limitations and actual carrier-induced index effects in the device. An alternative approach is to use a complex gain-coupling mechanism [12] to improve laser performance without sacrificing manufacturability and device reliability. Due to the above reasons, in this work, an integratable and high speed ridge complex-coupled InGaAsP MQW-DFB laser is fabricated on a semi-insulating substrate by metal-organic chemical vapor deposition (MOCVD).…”