2011
DOI: 10.1021/jp204579u
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Complex Defect Structure in the Core of Sn-Doped In2O3 Nanorods and Its Relationship with a Dislocation-Driven Growth Mechanism

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Cited by 33 publications
(27 citation statements)
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“…TiO 2 is initially formed by slow oxidation of TiN during the thermal treatment. Hence, the elongated structures are formed following a vapor–solid process, in which parameters such as temperature, vapor pressure, supersaturation ratios, surface energies, oxidation rate and presence of dopants, among others, are involved in the anisotropic growth . Variations of these parameters on the different regions of the surface of the sample (A, B, C) should be considered.…”
Section: Resultsmentioning
confidence: 99%
See 1 more Smart Citation
“…TiO 2 is initially formed by slow oxidation of TiN during the thermal treatment. Hence, the elongated structures are formed following a vapor–solid process, in which parameters such as temperature, vapor pressure, supersaturation ratios, surface energies, oxidation rate and presence of dopants, among others, are involved in the anisotropic growth . Variations of these parameters on the different regions of the surface of the sample (A, B, C) should be considered.…”
Section: Resultsmentioning
confidence: 99%
“…Hence, the elongated structures are formed following a vapor-solid process, in which parameters such as temperature, vapor pressure, supersaturation ratios, surface energies, oxidation rate and presence of dopants, among others, are involved in the anisotropic growth. [19,24] Variations of these parameters on the different regions of the surface of the sample (A, B, C) should be considered. As an example, the Ar flow used during the treatment induces variable growth conditions at the edge or the center of the treated pellet, being the latter area less oxidized, as confirmed by EDS.…”
Section: Resultsmentioning
confidence: 99%
“…Electric current induced plastic deformation would favor the atomic diffusion along dislocations or other extended defects, as well as the growth of structures such as nano‐ or microwires, nanorods or nanoplates. In fact, dislocation driven growth of nanowires has been shown to be an important growth mechanism for different materials . The resistive heating in this work was carried out with current densities of the order of 10 4 A cm −2 while in the above mentioned works on electromigration, current densities in the range 10 4 –10 6 Acm −2 were used .…”
Section: Resultsmentioning
confidence: 99%
“…In fact, dislocation driven growth of nanowires has been shown to be an important growth mechanism for different materials. [36][37][38] The resistive heating in this work was carried out with current densities of the order of 10 4 A cm À2 while in the above mentioned works on electromigration, current densities in the range 10 4 -10 6 Acm À2 were used. [33][34][35] We suggest that electromigration induced stresses or plastic deformation contribute to the growth, in tens of seconds or few minutes, of a high density of MoO 3 plates.…”
Section: Resultsmentioning
confidence: 99%
“…Sn-doped In 2 O 3 nanostructures have several superior properties including a high metallic conductivity, excellent oxidation resistance, and good thermal stability. However, recent works on Sn-doped In 2 O 3 nanostructures with various morphologies have been limited to synthesis using mixed ceramic powders composed of various elements, such as In 2 O 3 with SnO 2 or InN with SnO 2 , on the substrates, with or without an Au catalyst layer [14,16]. Some Sn-doped In 2 O 3 nanostructures were synthesized using mixed metallic In and Sn powders on Au catalyst-coated substrates [17].…”
Section: Introductionmentioning
confidence: 99%