Two different process technologies were investigated for the fabrication of high-efficiency GaInP/GaAs dual-junction solar cells on silicon: direct epitaxial growth and layer transfer combined with semiconductor wafer bonding. The intention of this research is to combine the advantages of high efficiencies in III-V tandem solar cells with the low cost of silicon. Direct epitaxial growth of a GaInP/GaAs dual-junction solar cell on a GaAs y P 1 −y buffer on silicon yielded a 1-sun efficiency of 16.4% (AM1.5g). Threading dislocations that result from the 4% lattice grading are still the main limitation to the device performance. In contrast, similar devices fabricated by semiconductor wafer bonding on n-type inactive Si reached efficiencies of 26.0% (AM1.5g) for a 4-cm 2 solar cell device.
In this study, the transparent conducting polymer of poly (3,4-ethylenendioxythiophene): poly(styrene sulphonate) (PEDOT:PSS) was nanohybridized via inclusion of gold nanofillers including nanospheres (NSs) and nanorods (NRs). Such nanocomposite thin films offer not only more optimum conductivity than the pristine polymer but also excellent resistivity against volatile organic compounds (VOCs). Interestingly, such amazing properties are achieved in the diluted regimes of the nanofillers and depend on the characteristics of the interfacial region of the polymer and nanofillers, i.e. the aspect ratio of the latter component. Accordingly, a shape dependent response is made that is more desirable in case of using the Au nanorods with a much larger aspect ratio than their nanosphere counterparts. This transparent nanocomposite thin film with an optimized conductivity and very low sensitivity to organic gases is undoubtedly a promising candidate material for the touch screen panel production industry. Considering PEDOT as a known material for integrated electrodes in energy saving applications, we believe that our strategy might be an important progress in the field.
ARTICLEand nanopipe morphologies that are driven by diffusion processes. Further investigations of these phenomena may provide clues toward the control of the morphology of In 2 O 3 nanorods with nanopipes.
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