Complex effective index in graphene-silicon waveguides

Sorianello, Vito; Angelis, Gabriele De; Cassese, Tommaso; Midrio, M.; Romagnoli, M.; Moshin, M.; Otto, Martin; Neumaier, Daniel; Asselberghs, Inge; Campenhout, Joris Van; Huyghebaert, Cedric

doi:10.1364/oe.24.029984

Cited by 38 publications

(23 citation statements)

References 36 publications

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“…A commercially available mode solver is used to evaluate n eff and the optical absorption of the waveguide mode. SLG is modelled with an in-plane dielectric constant obtained from the optical conductivity [70], and the outof-plane dielectric constant is taken as equal to the graphite dielectric constant [79]. We use the closed formula for the complex optical conductivity [80]:…”

Section: Graphene-based Modulatorsmentioning

confidence: 99%

Graphene-based integrated photonics for next-generation datacom and telecom

Romagnoli¹,

Sorianello²,

et al. 2018

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Graphene is an ideal material for optoelectronic applications. Its photonic properties give several advantages and complementarities over Si photonics. For example, graphene enables both electro-absorption and electro-refraction modulation with an electro-optical index change exceeding 10 −3 . It can be used for optical add-drop multiplexing with voltage control, eliminating the current dissipation used for the thermal detuning of microresonators, and for thermoelectric-based ultrafast optical detectors that generate a voltage without transimpedance amplifiers. Here, we present our vision for graphene-based integrated photonics. We review graphene-based transceivers and compare them with existing technologies. Strategies for improving power consumption, manufacturability and wafer-scale integration are addressed. We outline a roadmap of the technological requirements to meet the demands of the datacom and telecom markets. We show that graphene based integrated photonics could enable ultrahigh spatial bandwidth density , low power consumption for board connectivity and connectivity between data centres, access networks and metropolitan, core, regional and long-haul optical communications.Photonics is poised to play an increasingly important role in ICT ( Fig. 1a), since the fixed high capacity links are largely based on photonic technologies. Photonic devices need to support ultra-large bandwidth operation, for example, 200 Tb s−1 in a single fibre[9] and >10 Tb s −1 cm −2 in integrated Si photonics chips [10]. To achieve this, the key components of Si photonics, photodetectors and modulators, need very high performances in terms of speed (≥25 Gb s −1 ), footprint (<1 mm 2 ), insertion loss (<4 dB), manufacturability (>10 6 pieces per year) and power consumption (<1 pJ bit −1 ). To date, these requirements have not been fulfilled in one system [11]. Furthermore, in terms of production volumes, photonics is not yet comparable to microelectronics [12], even if the increase in demand for optical networks would, by 2021, lead to an average global Internet Protocol (IP) traffic of 3.3 ZB (zettabytes), corresponding to an average usage data rate of ~800 Tb s −1 (refs[13,14]). In the context of the IoT[7], other applications, including infrared (IR) sensors, biosensors, environmental sensors, metrology, quantum communications and machine vision, will require even larger production volumes [13,15].The telecom network can be divided into three segments: access, aggregation and core (Fig. 1a). The access network is the interface between subscribers and the immediate service provider. The aggregation network aggregates all the input data streams from tributary access networks, converging towards the higher-level core network. The aggregation network includes local and metropolitan networks, which then converge to regional networks. A local area network (LAN) interconnects computers within a limited area, such as a residence, school, laboratory, university or office building. A metropolitan area network (MAN) interconnects us...

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Section: Graphene-based Modulatorsmentioning

confidence: 99%

Graphene-based integrated photonics for next-generation datacom and telecom

Romagnoli¹,

Sorianello²,

et al. 2018

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“…The 10 nm-thick layer of SiO 2 insulates Graphene from the Si waveguide core and forms a Silicon-InsulatorGraphene (SIG) capacitor. Fermi Level on Graphene may be changed by applying a voltage across the SIG capacitor [13]. Standard single polarization grating couplers having 5 dB insertion loss at 1550 nm are also included in the device design for input and output vertical fiber coupling.…”

Section: Fabrication and Theorymentioning

confidence: 99%

“…electro-absorption modulation [3,[8][9][10], and detection [4,11,12]. Regarding optical modulation, the complex effective refraction index of Graphene on Si waveguides has been recently measured and theoretically fitted [13]. The resulting data show that, by electrically gating the Fermi level of Graphene, the waveguide absorption changes with a simultaneous large electro-refractive effect (effective index change) [14][15][16][17].…”

Section: Introductionmentioning

confidence: 99%

Chirp management in silicon-graphene electro absorption modulators

Sorianello¹,

Contestabile²,

Midrio³

et al. 2017

Opt. Express

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Abstract:We study the frequency chirp properties of graphene-on-silicon electro-absorption modulators (EAMs). By experimentally measuring the chirp of a 100 µm long single layer graphene EAM, we show that the optoelectronic properties of graphene induce a large positive linear chirp on the optical signal generated by the modulator, giving rise to a maximum shift of the instantaneous frequency up to 1.8 GHz. We exploit this peculiar feature for chromatic-dispersion compensation in fiber optic transmission thanks to the pulse temporal lensing effect. In particular, we show dispersion compensation in a 10Gb/s transmission experiment on standard single mode fiber with temporal focusing distance (0-dB optical-signal-to-noise ratio penalty) of 60 km, and also demonstrate 100 km transmission with a bit error rate largely lower than the conventional Reed-Solomon forward error correction threshold of 10 −3 .

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“…Metal contacts were placed by metal lift-off on the SLG and Si with separate processes: Palladium (Pd) is used for the SLG, while Si is contacted with a stack of Titanium (Ti)/Platinum (Pt)/Gold (Au). The 10 nm-thick layer of SiO 2 insulates Graphene from the Si waveguide core and forms a Silicon-Insulator-Graphene (SIG) capacitor [14]. Fermi Level on Graphene may be changed by applying a voltage across the SIG capacitor.…”

Section: Device Descriptionmentioning

confidence: 99%

Optical Pre-Emphasis by Cascaded Graphene Electro Absorption Modulators

Sorianello

Contestabile

Midrio

et al. 2019

IEEE Photon. Technol. Lett.

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A simple optical circuit made by a cascade of two graphene-on-silicon electro absorption modulators (EAMs) of different length is used for the optical pre-emphasis of 10 Gb/s non-return-to-zero (NRZ) signals by delay-inverse-weight compensation. Transmission up to 100 km on single mode fiber (SMF) without dispersion compensation is reported, showing also the large performance advantage (6 dB in back-to back and around 5 dB in transmission) in respect of the conventional single EAM transmitter configuration.

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Complex effective index in graphene-silicon waveguides

Cited by 38 publications

References 36 publications

Graphene-based integrated photonics for next-generation datacom and telecom

Graphene-based integrated photonics for next-generation datacom and telecom

Chirp management in silicon-graphene electro absorption modulators

Optical Pre-Emphasis by Cascaded Graphene Electro Absorption Modulators

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