2017
DOI: 10.1016/j.tsf.2017.02.016
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Complex refractive index of InXGa1-XN thin films grown on cubic (100) GaN/MgO

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Cited by 7 publications
(3 citation statements)
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“…This value is slightly lower than the bowing of the emission energy in hexagonal In x Ga 1– x N ( b ≈ 2.8 eV). , Compared to other cubic In x Ga 1– x N epilayers, the emission energies reported here for low indium content ( x (In) < 0.3) align rather well with other bulk-like thin film samples. , For larger alloy compositions (0.3 < x (In) < 0.5), reports on the optical properties of c-In x Ga 1– x N are sparse. We observe emission peaks at significantly lower energies than those of other c-In x Ga 1– x N layers or multi quantum wells. The most recent study, ref , determines a significantly smaller bowing of b = 1.4 eV by ellipsometry measurements, which might be caused by the somewhat higher energy values that are measured in the very highly alloyed samples with x (In) > 0.9 and the lack of data for x (In) > 0.5 (see Figure b). The discrepancies may also arise from the fact that our emissions may be caused by recombinations that are localized in the potential valleys of the alloys, which ellipsometry may be less sensitive to.…”
Section: Resultsmentioning
confidence: 62%
“…This value is slightly lower than the bowing of the emission energy in hexagonal In x Ga 1– x N ( b ≈ 2.8 eV). , Compared to other cubic In x Ga 1– x N epilayers, the emission energies reported here for low indium content ( x (In) < 0.3) align rather well with other bulk-like thin film samples. , For larger alloy compositions (0.3 < x (In) < 0.5), reports on the optical properties of c-In x Ga 1– x N are sparse. We observe emission peaks at significantly lower energies than those of other c-In x Ga 1– x N layers or multi quantum wells. The most recent study, ref , determines a significantly smaller bowing of b = 1.4 eV by ellipsometry measurements, which might be caused by the somewhat higher energy values that are measured in the very highly alloyed samples with x (In) > 0.9 and the lack of data for x (In) > 0.5 (see Figure b). The discrepancies may also arise from the fact that our emissions may be caused by recombinations that are localized in the potential valleys of the alloys, which ellipsometry may be less sensitive to.…”
Section: Resultsmentioning
confidence: 62%
“…The indium concentration (molar fraction x) is critical to obtaining In x Ga 1-x N thin films with a good quality structure. In this investigation, several samples (simulation models) of In x Ga 1-x N with arbitrary In concentrations were produced, by the zero-toone experimental values used by Vilchis et al [11] and V.D. Compeán et al [26].…”
Section: Indium Molar Concentration Effectmentioning
confidence: 99%
“…In contrast, the cubic phase (zincblende) does not exhibit polarization due to its centrosymmetric structure [10]. Also, as a result of the reduced phonon scattering rate due to a higher degree of crystal symmetry, it is intuited that cubic nitrides could have a higher saturated electron drift [11].…”
Section: Introductionmentioning
confidence: 99%