Composite HfO2/Al2O3-dielectric AlGaAs/InGaAs MOS-HEMTs by using RF sputtering/ozone water oxidation

Lee, Ching Sung; Liao, Yu; Chou, Bo Yi; Liu, Han Yin; Hsu, Wei Chou

doi:10.1016/j.spmi.2014.04.016

Cited by 11 publications

(5 citation statements)

References 16 publications

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“…In order to attain low power consumption and high conversion efficiency, high breakdown voltage, leakage suppression, and high on/off current ratio are crucial. Meanwhile, the metal-oxide-semiconductor (MOS) structure can achieve a high breakdown voltage and on/off current ratio because the gate insulator effectively prevents the gate leakage and suppresses the surface leakage [19,20].…”

Section: Introductionmentioning

confidence: 99%

High-Sensitivity pH Sensor Based on Coplanar Gate AlGaN/GaN Metal-Oxide-Semiconductor High Electron Mobility Transistor

Cho

2021

Chemosensors

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The sensitivity of conventional ion-sensitive field-effect transistors is limited to the Nernst limit (59.14 mV/pH). In this study, we developed a pH sensor platform based on a coplanar gate AlGaN/GaN metal-oxide-semiconductor (MOS) high electron mobility transistor (HEMT) using the resistive coupling effect to overcome the Nernst limit. For resistive coupling, a coplanar gate comprising a control gate (CG) and a sensing gate (SG) was designed. We investigated the amplification of the pH sensitivity with the change in the magnitude of a resistance connected in series to each CG and SG via Silvaco TCAD simulations. In addition, a disposable extended gate was applied as a cost-effective sensor platform that helped prevent damages due to direct exposure of the AlGaN/GaN MOS HEMT to chemical solutions. The pH sensor based on the coplanar gate AlGaN/GaN MOS HEMT exhibited a pH sensitivity considerably higher than the Nernst limit, dependent on the ratio of the series resistance connected to the CG and SG, as well as excellent reliability and stability with non-ideal behavior. The pH sensor developed in this study is expected to be readily integrated with wide transmission bandwidth, high temperature, and high-power electronics as a highly sensitive biosensor platform.

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Section: Introductionmentioning

confidence: 99%

High-Sensitivity pH Sensor Based on Coplanar Gate AlGaN/GaN Metal-Oxide-Semiconductor High Electron Mobility Transistor

Cho

2021

Chemosensors

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“…Also, AlGaN/GaNbased MOSHEMT is more suitable for high power and high-frequency electronic device applications than conventional HEMT-based devices due to their low gate capacitance and low gate leakage current. Today, Al 2 O 3 [9], [10], HfO 2 [11], [12], SiO 2 [13], [14], Si 3 N 4 [14], or La 2 O 3 [13], [14] materials are commonly used as the gate dielectric for AlGaN/GaN MOSHEMTs. AlGaN/GaN HEMT and MOSHEMTbased devices suffer from high contact and high ON-resistance because of metallic ohmic contacts and substantial source-to-drain distance.…”

Section: Introductionmentioning

confidence: 99%

Analytical modeling and simulation of lattice-matched Ferro PZT AlGaN/GaN MOSHEMT for high-power and RF/Microwave applications

et al. 2023

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In this paper we have developed an analytical model for Ferro PZT Al 2 O 3 /AlGaN/AlN/GaN MOSHEMT involving the solution of Poisson and Schrödinger equations. This analytical model covers most of the operating regimes of the Ferro PZT MOSHEMT. The two-dimensional electron gas (2-DEG) sheet charge density (n s ), threshold voltage (V th ), drain current (I ds ), gate capacitance (C gs and C gd ), and unit gain cut-off frequency(f T ) model equations are generated and simulated with MATLAB tool. It is also observed that the insertion of the Ferro Pb(Zr, Ti)O 3 PZT (lead zirconium titanate) material can also improve the device performance. The proposed Ferro PZT MOSHEMT model accurately produces a higher drain current of 1.14A/mm , a high transconductance of 362S/mm, the gate-to-source capacitance of 50.99pF, the gate-to-drain capacitance of 38.25pF, and high cut-off frequency of 0.033THz for 20nm AlGaN barrier layer. The proposed model results show good agreement with the TCAD-Atlas simulation results and were satisfactory for the different AlGaN barrier layer thickness. The generated model and simulation results show the potential of using the Ferro PZT MOSHEMT for high-power and RF/Microwave applications.

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“…The built in composite semiconductor HEMTs devise remains to be widely used for the application of the devices with lower-noise immune, higher voltage, and power-switching characteristics of the microwave/ millimeter-wave Integrated Circuit ( [1][2]. Nevertheless, the gate leakage challenges in thermionic release at barrier of a Schottky-gate due to elevation electric fields and surface charger at the barrier of gate-drain regional behavior would remarkably reduce the device performance.…”

Section: Introductionmentioning

confidence: 99%

“…There are varies types of gate dielectric materials have be employed in the MOS-gate device to improve the gate insulated driving capability. By accounting varies dielectric impact in MOS-HEMT devices along with different gate dielectric material are studied by including many processing varying parameter in the performances too be deliberate in future Ga based devices .This work given as better insight to the MOS-HEMTs with different compound HfO 2 /Al 2 O 3 dielectric layers to designed for power application in RF regime [1][2][3][4][5][6][7][8][9][10].…”

Section: Introductionmentioning

confidence: 99%

Model of HfO2/Al2O3 Dielectric ALNINNAlganmos HEMT for Power Application

2019

IJITEE

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The work involves to devise dielectric HfO2 /Al2O3MOS-HEMT stack to validate for the device structure through the refinement of mesh analysis. The structure of the AlN\InN\AlGaN HEMT MOS-HEMTs are designed and meshed using the script file in the Sentaurus structure editor. TheAlN\InN\AlGaN MOS-HEMTs output characteristic are examined for physics of MOS-HEMT in Hydrodynamic model TCAD. The amalgamation formation ofthe Al0.30GaN0.70 barrierinterface with the channelofhigh 2DEG density result in anincreaseddrain current density and high trans conductance. Additional the device performance of DC transfer characteristics, small signal analysis of AlN/InN/AlGaNMOS-HEMT are analyzed and simulated.

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Composite HfO2/Al2O3-dielectric AlGaAs/InGaAs MOS-HEMTs by using RF sputtering/ozone water oxidation

Cited by 11 publications

References 16 publications

High-Sensitivity pH Sensor Based on Coplanar Gate AlGaN/GaN Metal-Oxide-Semiconductor High Electron Mobility Transistor

High-Sensitivity pH Sensor Based on Coplanar Gate AlGaN/GaN Metal-Oxide-Semiconductor High Electron Mobility Transistor

Analytical modeling and simulation of lattice-matched Ferro PZT AlGaN/GaN MOSHEMT for high-power and RF/Microwave applications

Model of HfO2/Al2O3 Dielectric ALNINNAlganmos HEMT for Power Application

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