Composite structures of porous silicon and polyaniline for optoelectronic applications

Abstract

Composite structures of p-type meso-porous silicon (PS) and polyaniline (PAN) have been fabricated by electrochemical polymerization process. The composite structure provides a unique way to control the conduction either through the porous silicon matrix or via the polyaniline, by changing the polarity of the applied bias voltage. In addition, photoluminescence (PL) experiments revealed enhanced PL emission at the green wavelengths that are originated from the polyaniline network, rather than the porous silicon. The above composite structure can be used as a building block for improved electroluminescence and light emitting devices in a wide range of applications.

Photoelectrochemical properties of porous silicon based novel photoelectrodes

“…The visible photoluminescence in PS is known to degrade with time due to oxidation 2, 3. There have been several studies towards improving the stability by forming a suitable interface 3–6. The direct photoelectrolysis of water at a stable semiconductor electrolyte interface is of interest for developing efficient photoelectrochemical cells for Hydrogen production.…”