Composition- and Doping-Graded-Base InP/InGaAsSb Double Heterojunction Bipolar Transistors Exhibiting Simultaneous &lt;inline-formula&gt; &lt;tex-math notation="TeX"&gt;\(f_{t}\) &lt;/tex-math&gt;&lt;/inline-formula&gt; and &lt;inline-formula&gt; &lt;tex-math notation="TeX"&gt;\(f_{\textrm {max}}\) &lt;/tex-math&gt;&lt;/inline-formula&gt; of Over 500 GHz

Kashio, Norihide; Hoshi, Takayuki; Kurishima, K.; Ida, M.; Matsuzaki, Hiroyuki

doi:10.1109/led.2014.2365216

Cited by 15 publications

(4 citation statements)

References 13 publications

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“…However, the electron mobility of GaAsSb is lower than that of InGaAs, which limits f T [1]. Recently, we proposed a compositionally graded InGaAsSb base in order to boost electron mobility, and demonstrated simultaneous f T and f max of over 500 GHz [4]. The quaternary graded-base DHBTs with f T =f max ¼ 547=784 GHz have been also demonstrated [5] from a group of ETH-Zürich.…”

Section: Introductionmentioning

confidence: 99%

InGaP/GaAsSb/InGaAsSb double heterojunction bipolar transistors with 703-GHz fmax and 5.4-V breakdown voltage

Hoshi

Kashio

Shiratori

et al. 2019

IEICE Electron. Express

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This letter presents the current-gain and high-frequency characteristics of double heterojunction bipolar transistors (DHBTs) consisting of an n-InGaP emitter, a p-GaAsSb/p-InGaAsSb base, and an n-InP collector. The impact of the thickness of the first base metal (Pt) on the base contact resistivity is investigated in a p-GaAsSb/p-InGaAsSb test structure for the purpose of improving f max. A low base contact resistivity (4.8 Ωµm 2) is obtained when the Pt layer is thinner than the p-GaAsSb layer. A fabricated InGaP/GaAsSb/InGaAsSb DHBT with a 0.25-µm emitter exhibits a high current gain of 33 even though the base sheet resistance is as low as 1025 Ω/sq. The DHBT also exhibits an f max of 703 GHz and a breakdown voltage of 5.4 V. These results demonstrate that this DHBT technology is useful for fabricating high-speed integrated circuits with high output voltages.

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Section: Introductionmentioning

confidence: 99%

InGaP/GaAsSb/InGaAsSb double heterojunction bipolar transistors with 703-GHz fmax and 5.4-V breakdown voltage

Hoshi

Kashio

Shiratori

et al. 2019

IEICE Electron. Express

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“…The composition-graded layer was first proposed in the GaAs/AlGaAs system, which is known as a graded-index separate confinement heterostructure (GRIN SCH) and has been well developed in InP and GaN systems [10][11][12][13]. The composition-graded layer epitaxy technique provides more flexibility for semiconductor device designs, e.g., the modification of the builtin electric field, bandgap profile, and refractive index profile [14][15][16]. Further improving the performance of GaSb-based lasers requires addressing the series resistance caused by the abrupt interface between the waveguide layer and cladding layer, which remains a severe problem.…”

Section: Introductionmentioning

confidence: 99%

High-Power, High-Efficiency GaSb-Based Laser with Compositionally Linearly Graded AlGaAsSb Layer

et al. 2023

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We propose a novel graded AlGaAsSb layer growth method to achieve a super-linear interface by precisely controlling the cell temperature and valve position. Atomically smooth surface and lattice-matched epitaxy was confirmed by AFM and the HRXRD characterization of the graded AlGaAsSb layer sample. With the inserted graded layer between the cladding and waveguide layers, high-power, high-efficiency GaSb-based laser emitters and laser bars were confirmed. The linearly graded interface layer smooths the potential barrier peak between the cladding and waveguide layers, which resulted in a low turn-on voltage of 0.65 V and an ultra-low series resistance of 0.144 Ω. A maximum continuous-wave output power of 1.8 W was obtained with a high power conversion efficiency of 28% at 1.1 A and 12% at 8 A. A facet-coated laser bar was also fabricated with a record-high CW output power of 18 W. A high internal quantum efficiency of 83 was maintained at 40 °C, implying improved carrier injection efficiency, which benefits from the built-in electric field of the composition-graded AlGaAsSb layer.

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“…[3][4][5][6] Usually, heavily silicon-doped InGaAs cap layers have been used as contact layers to achieve low contact resistance fabricated by ex situ or in situ non-alloyed contacts in InP HEMTs [7][8][9] and HBTs. [10][11][12] The efficacy of high silicon-doping concentrations in InGaAs cap layers to obtain contact resistance of 4×10 −8 Ω•cm 2 has been demonstrated because the use of high semiconductor doping concentrations is known to promote current transport due to the tunneling effect. [13][14][15] However, it is difficult to further reduce the contact resistance by increasing the silicon-doping concentration in InGaAs, which can only be doped to the 19th power owing to the doping solubility limit.…”

Section: Introductionmentioning

confidence: 99%

Characterization of low-resistance ohmic contacts to heavily carbon-doped n-type InGaAsBi films treated by rapid thermal annealing*

Zhou¹,

Ai²,

Qi³

et al. 2021

Chinese Phys. B

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Carbon-doped InGaAsBi films on InP:Fe (100) substrates have been grown by gas source molecular beam epitaxy (GSMBE). The electrical properties and non-alloyed Ti/Pt/Au contact resistance of n-type carbon-doped InGaAsBi films were characterized by Van der Pauw–Hall measurement and transmission line method (TLM) with and without rapid thermal annealing (RTA). It was found that the specific contact resistance decreases gradually with the increase of carrier concentration. The electron concentration exhibits a sharp increase, and the specific contact resistance shows a noticeable reduction after RTA. With RTA, the InGaAsBi film grown under CBr4 supply pressure of 0.18 Torr exhibited a high electron concentration of 1.6 × 1021 cm−3 and achieved an ultra-low specific contact resistance of 1 × 10−8 Ω⋅cm2, revealing that contact resistance depends greatly on the tunneling effect.

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Cited by 15 publications

References 13 publications

InGaP/GaAsSb/InGaAsSb double heterojunction bipolar transistors with 703-GHz <i>f</i><sub>max</sub> and 5.4-V breakdown voltage

InGaP/GaAsSb/InGaAsSb double heterojunction bipolar transistors with 703-GHz <i>f</i><sub>max</sub> and 5.4-V breakdown voltage

High-Power, High-Efficiency GaSb-Based Laser with Compositionally Linearly Graded AlGaAsSb Layer

Characterization of low-resistance ohmic contacts to heavily carbon-doped n-type InGaAsBi films treated by rapid thermal annealing*

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