Composition and strain analysis of Si1-xGex core fiber with Raman spectroscopy

Wang, Dongyang; Chen, Na; Chen, Zhenyi; Zhao, Ziwen; Liu, Huanhuan

doi:10.1063/1.5034408

Cited by 4 publications

(4 citation statements)

References 25 publications

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“…4 , fibres typically are drawn at temperatures of ~1950 °C, based on the use of silica as the cladding. SiGe based fibres with Ge concentrations from 1 at% 99 to 46 at% 118 have been studied, both as continuous fibre cores 46 , 72 , 75 , 118 , and as source material for particles 48 within the silica cladding. Compositional variations due to the preferential solidification of silicon from the melt are observed in the as-drawn material 75 , 118 , as seen in Fig.…”

Section: Materials and Phase Diagramsmentioning

confidence: 99%

“…SiGe based fibres with Ge concentrations from 1 at% 99 to 46 at% 118 have been studied, both as continuous fibre cores 46 , 72 , 75 , 118 , and as source material for particles 48 within the silica cladding. Compositional variations due to the preferential solidification of silicon from the melt are observed in the as-drawn material 75 , 118 , as seen in Fig. 5a–d , with a more homogeneous structure obtained after CO 2 laser annealing 46 , 99 , 119 , 120 , at temperatures estimated to exceed 1800 °C, as shown in Fig.…”

Section: Materials and Phase Diagramsmentioning

confidence: 99%

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Semiconductor core fibres: materials science in a bottle

2021

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Novel core fibers have a wide range of applications in optics, as sources, detectors and nonlinear response media. Optoelectronic, and even electronic device applications are now possible, due to the introduction of methods for drawing fibres with a semiconductor core. This review examines progress in the development of glass-clad, crystalline core fibres, with an emphasis on semiconducting cores. The underlying materials science and the importance of post-processing techniques for recrystallization and purification are examined, with achievements and future prospects tied to the phase diagrams of the core materials.

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Section: Materials and Phase Diagramsmentioning

confidence: 99%

Section: Materials and Phase Diagramsmentioning

confidence: 99%

Semiconductor core fibres: materials science in a bottle

2021

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“…The second fabrication method is molten core fiber drawing (MCD), which has been adopted more globally because it offers high yields and lower production costs. [32][33][34][35][36] The fibers are drawn from a preform that consists of a glass cladding tube and a semiconductor material core that can be inserted into the pore in the form of a solid rod or powder. The preform is heated above the glass transition temperature of the cladding (>2000 C for silica), which is high enough to melt the semiconductor core material.…”

Section: Fabrication Of Semiconductor Core Glass-clad Fibersmentioning

confidence: 99%

Laser Thermal Processing of Group IV Semiconductors for Integrated Photonic Systems

Aktaş

Peacock

2021

Advanced Photonics Research

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In the quest to expand the functionality and capacity of group IV semiconductor photonic systems, new materials and production methods are constantly being explored. In particular, flexible fabrication and postprocessing approaches that are compatible with different materials and allow for tuning of the components and systems are of great interest. Within this research area, laser thermal processing has emerged as an indispensable tool that can be applied to enhance and/or modify the material, structural, electrical and optical properties of group IV elemental and compound semiconductors at various stages of the production process. Herein, the recent progress made in the application of laser processing techniques to develop integrated semiconductor systems in both fiber‐ and planar‐based platforms is evaluated. Laser processing has allowed for the production of semiconductor waveguides with high crystallinity in the core and low optical losses, as well as postfabrication trimming of device characteristics and direct writing of tunable strain and composition profiles for bandgap engineering and optical waveguiding. For each platform, the current challenges and opportunities for the future development of laser‐processed integrated semiconductor photonic systems are presented.

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“…SiSi , SiGe and x > 0.5, we take the unstrained peak position of 0 SiGe , as → 0.5. Following the procedure from Wang et al, 12 x and ∥ can be isolated from equation (18a) and (18c), and then substituted into equation (18b) to obtain an estimation for calc SiGe peak position in terms of the experimentally obtained SiSi and GeGe peak positions, calc…”

Section: Si Section S4 -Composition and Strain Estimations From Ramanmentioning

confidence: 99%

Laser-Driven Phase Segregation and Tailoring of Compositionally Graded Microstructures in Si–Ge Nanoscale Thin Films

Aktaş

MacFarquhar

et al. 2020

ACS Appl. Mater. Interfaces

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The ability to manipulate the composition of semiconductor alloys on demand and at nanometer-scale resolutions is a powerful tool that could be exploited to tune key properties such as the electronic band gap, mobility, and refractive index. However, existing methods to modify the composition involve altering the stoichiometry by temporal or spatial modulation of the process parameters during material growth, limiting the scalability and flexibility for device fabrication. Here, we report a laser processing method for localized tailoring of the composition in amorphous silicon−germanium (a-SiGe) nanoscale thin films on silicon substrates, postdeposition, by controlling phase segregation through the scan speed of the laser-induced molten zone. Laser-driven phase segregation at speeds adjustable from 0.1 to 100 mm s −1 allows access to previously unexplored solidification dynamics. The steady-state spatial distribution of the alloy constituents can be tuned directly by setting the laser scan speed constant to achieve indefinitely long Si 1−x Ge x microstructures, exhibiting the full range of compositions (0 < x < 1). To illustrate the potential, we demonstrate a photodetection application by exploiting the laser-written polycrystalline SiGe microstripes, showing tunability of the optical absorption edge over a wavelength range of 200 nm. Our method can be applied to pseudobinary alloys of ternary semiconductors, metals, ceramics, and organic crystals, which have phase diagrams similar to those of SiGe alloys. This study opens a route for direct laser writing of novel devices made of alloy microstructures with tunable composition profiles, including graded-index waveguides and metasurfaces, multispectral photodetectors, full-spectrum solar cells, and lateral heterostructures.

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Composition and strain analysis of Si1-xGex core fiber with Raman spectroscopy

Cited by 4 publications

References 25 publications

Semiconductor core fibres: materials science in a bottle

Semiconductor core fibres: materials science in a bottle

Laser Thermal Processing of Group IV Semiconductors for Integrated Photonic Systems

Laser-Driven Phase Segregation and Tailoring of Compositionally Graded Microstructures in Si–Ge Nanoscale Thin Films

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