The 'Klarite™' SERS sensor platform consisting of an array of gold coated inverted square pyramids patterned onto a silicon substrate has become the industry standard over the last decade, providing highly reproducible SERS signals. In this paper, we report successful transfer from silicon to plastic base platform of an optimized SERS substrate design which provides 8 times improvement in sensitivity for a Benzenethiol test molecule compared to standard production Klarite. Transfer is achieved using roll-to-roll and sheet-level nanoimprint fabrication techniques. The new generation plastic SERS sensors provide the added benefit of cheap low cost mass-manufacture, and easy disposal. The plastic replicated SERS sensors are shown to provide ~10(7) enhancement factor with good reproducibility (5%).

We demonstrate low-loss slot waveguides on silicon-on-insulator platform. Waveguides oriented along the (11-2) direction on the Si (110) plane were first fabricated by a standard e-beam lithography and dry etching process. A tetramethylammonium hydroxide-based anisotropic wet etching technique was then used to remove any residual side wall roughness. Using this fabrication technique, propagation loss as low as 3.7 dB/cm was realized in silicon slot waveguide for wavelengths near 1550 nm. We also realized low propagation loss of 1 dB/cm for silicon strip waveguides.

Critical coupling control is an important concept used in integrated photonics to obtain functionalities such as single and coupled resonator optical filters and wavelength multiplexers. Realization of critical coupling depends strongly on device fabrication, and reproducibility is therefore an ongoing challenge. Post-fabrication trimming offers a solution for achieving optimal performance for individual devices. Ion implantation into silicon causes crystalline lattice damage which results in an increase of the material's refractive index and therefore creates a platform for realization of various optical devices. In recent years, we have presented results on the development of erasable gratings, optical filters and Mach-Zehnder interferometers using ion implantation of germanium into silicon. Here, we report the design, fabrication and testing of silicon-on-insulator racetrack resonators, trimmed by localised annealing of germanium ion implanted silicon using continuous and pulsed wave laser sources. The results demonstrate the ability to permanently tune the critical coupling condition of racetrack resonators. Compared to the pulsed lasers used for annealing, continuous wave lasers revealed much higher extinction ratio due to improved material quality after silicon recrystallization.

In this paper we investigate suitability of arrays of gold coated pyramids for surface-enhanced Raman scattering (SERS) sensing applications. Pyramidarrays composed of 1000 nm pit size with 1250 nm pitch lengthwerereplicated on a plastic substrate by roll-to-roll (R2R) ultraviolet (UV) embossing. The level of SERS enhancement, and qualitative performance provided by the new substrate is investigated by comparing Raman spectrum of benzenethiol (BTh) test molecules to the benchmark Klarite SERS substrate which comprises inverted pyramid arrays(1500 nm pit size with 2000 nm pitch length) fabricated on a silicon substrate. The new substrate is found to provide upto 11 times increase in signal in comparison to the inverted pyramid (IV-pyramid) arrays fabricated on an identical plastic substrate. Numerical simulation and experimental evidence suggest that strongly confined electromagnetic fields close to the base of the pyramids, are mainly responsible for the Raman enhancement factor, instead of the fields localized around the tip. Unusually strong plasmon fields are projected upto 200nm from the sidewalls at the base of the pyramid increasing the cross sectional sensing volume.

We demonstrate low-loss hydrogenated amorphous silicon (a-Si:H) waveguides by hot-wire chemical vapor deposition (HWCVD). The effect of hydrogenation in a-Si at different deposition temperatures has been investigated and analyzed by Raman spectroscopy. We obtained an optical quality a-Si:H waveguide deposited at 230°C that has a strong Raman peak shift at 480 cm −1 , peak width (full width at half-maximum) of 68.9 cm −1 , and bond angle deviation of 8.98°. Optical transmission measurement shows a low propagation loss of 0.8 dB/cm at the 1550 nm wavelength, which is the first, to our knowledge, report for a HWCVD a-Si:H waveguide.