Composition and structure of CuInS 2 films prepared by spray pyrolysis

Krunks, Malle; Mikli, Valdek; Bijakina, Olga; Rebane, H.; Mere, Arvo; Varema, T.; Mellikov, E.

doi:10.1016/s0040-6090(99)00835-4

Cited by 88 publications

(37 citation statements)

References 11 publications

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“…However a subsequent heat treatment in a reducing atmosphere is still required to improve crystallinity and purity. 91 MOCVD has recently been investigated 92 for the deposition of CGS layers as part of a tandem structure, but the growth rate and cell efficiency are rather low.…”

Section: Alternative Cigs Growth Processesmentioning

confidence: 99%

Development of thin‐film Cu(In,Ga)Se₂and CdTe solar cells

Romeo¹,

Terheggen²,

Abou‐Ras³

et al. 2004

Progress in Photovoltaics

358

192

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Cu(In,Ga)Se2 and CdTe heterojunction solar cells grown on rigid (glass) or flexible foil substrates require p‐type absorber layers of optimum optoelectronic properties and n‐type wide‐bandgap partner layers to form the p–n junction. Transparent conducting oxide and specific metal layers are used for front and back electrical contacts. Efficiencies of solar cells depend on various deposition methods as they control the optoelectronic properties of the layers and interfaces. Certain treatments, such as addition of Na in Cu(In,Ga)Se2 and CdCl2 treatment of CdTe have a direct influence on the electronic properties of the absorber layers and efficiency of solar cells. Processes for the development of superstrate and substrate solar cells are reviewed. Copyright © 2004 John Wiley & Sons, Ltd.

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Section: Alternative Cigs Growth Processesmentioning

confidence: 99%

Development of thin‐film Cu(In,Ga)Se₂and CdTe solar cells

Romeo¹,

Terheggen²,

Abou‐Ras³

et al. 2004

Progress in Photovoltaics

358

192

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“…A peak located near the same 2θ position was previously observed when either In-rich or S-rich solutions were used for spray pyrolysis, and it was identified as a C 3 H 4 Cl 2 N 6 phase. 26 However, the C 3 H 4 Cl 2 N 6 phase can not be responsible for the peak observed in this study because SSPs do not produce by-products which can form the phase. A recent study also could not assign the same reflection at 26.5 ° to any phase, but found that it was characteristic for In-rich films.…”

Section: Resultsmentioning

confidence: 64%

CuInS2 films deposited by aerosol-assisted chemical vapor deposition using ternary single-source precursors

Jin

Banger

Harris

et al. 2005

Materials Science and Engineering: B

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“…Ternary chalcogenides have potential application in solar energy conversion [1][2][3][4][5][6][7][8][9] . There are many methods for preparing ternary chalcogenide thin films such as chemical bath deposition 10 , electrodeposition 11 , electrochemical atomic layer epitaxy 12 , flash evaporation 13 , electron bean evaporation 14 , spray pyrolysis 15 , sputter deposition 16 , thermal evaporation 17 and vacuum evaporation 18 . Amongst these deposition methods, electrodeposition is more attractive, since it offers the advantages of simple, economy, convenience and several experimental parameters can be controlled more precisely.…”

Section: Introductionmentioning

confidence: 99%

CATHODIC ELECTRODEPOSITION OF Cu 4 SnS 4 THIN FILMS FROM ACIDIC SOLUTION

Kassim¹,

Min²,

Tee³

et al. 2017

AJSTD

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In this work the synthesis of copper tin sulfide thin films by electrodeposition is carried out. The films were deposited onto ITO glass substrates from an aqueous solution bath containing copper sulfate, tin chloride and sodium thiosulfate at pH 1 and room temperature. Prior to the deposition, a cyclic voltammetry experiment was carried out between two potential limits (+1000 to -1000 mV versus Ag/AgCl) to probe the effect of the applied potential and to determine the most likely suitable electrodeposition potential for the deposition of copper tin sulfide. The deposition was attempted at various cathodic potentials such as -400, -600, -800, -1000 mV to determine the optimum deposition potential. The films have been characterized by techniques such as optical absorption, Xray diffraction and atomic force microscopy. The XRD patterns show that the films are polycrystalline with orthorhombic structure. The AFM studies reveal the electrodeposited films were smooth, compact and uniform at deposition potentials of -600 mV versus Ag/AgCl. The direct optical band-gap energy was obtained to be 1.58 eV.

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Composition and structure of CuInS 2 films prepared by spray pyrolysis

Cited by 88 publications

References 11 publications

Development of thin‐film Cu(In,Ga)Se₂and CdTe solar cells

Development of thin‐film Cu(In,Ga)Se₂and CdTe solar cells

CuInS2 films deposited by aerosol-assisted chemical vapor deposition using ternary single-source precursors

CATHODIC ELECTRODEPOSITION OF Cu 4 SnS 4 THIN FILMS FROM ACIDIC SOLUTION

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Composition and structure of CuInS 2 films prepared by spray pyrolysis

Cited by 88 publications

References 11 publications

Development of thin‐film Cu(In,Ga)Se2and CdTe solar cells

Development of thin‐film Cu(In,Ga)Se2and CdTe solar cells

CuInS2 films deposited by aerosol-assisted chemical vapor deposition using ternary single-source precursors

CATHODIC ELECTRODEPOSITION OF Cu 4 SnS 4 THIN FILMS FROM ACIDIC SOLUTION

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Product

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About

Development of thin‐film Cu(In,Ga)Se₂and CdTe solar cells

Development of thin‐film Cu(In,Ga)Se₂and CdTe solar cells