Composition control of GaAsP grown by molecular beam epitaxy

The incorporation behavior of arsenic and antimony in GaAsSb/GaAs grown by solid source molecular beam epitaxy

“…We find that the calculated results are in good agreement with experimental data. Compared to the equilibrium thermodynamic model, the nonequilibrium thermodynamic model is independent of V/III ratio, so it can well describe the growth process of MBE and the incorporation rule are similar to the results predicted by the nonequilibrium thermodynamic model [6][7][8][9]. The two main properties, the high sublimation energy of Sb 4 molecules and the low atomization energy, predict a higher incorporation efficiency of antimony than that of arsenic [17].…”

“…To explain the different incorporation behavior of group V elements, several equilibrium thermodynamic models had been proposed to describe the MBE growth process [6][7][8]. However, these models are not perfect to explain the experimental data [9,10].…”

Evidence and control of unintentional As-rich shells in GaAs1–x P x nanowires

“…such a simplistic growth model, only based on directly impinging fluxes, is not accurate enough to s if the re-emitted fluxes and shadowing effect As incorporation at the sidewall surface must also be considered. relative to P was largely reported for GaAsP layers grown by solid-The P content in the layer is found lower than the P content in the vapor limited growth, which is justified by kinetics arguments [50,51] conditions at the NW sidewalls are not known, but as a Ga droplet only forms at the top of the wire we can propose a group III limited regime for the shell. In these conditions, the respective kinetics of on (110) surfaces could also play an important role in the final composition Keeping geometrical corrections and all impinging fluxes constant, the local unintentional shell composition is found to depend on that of the NW core.…”

Anion exchange at the interfaces of mixed anion III–V heterostructures grown by molecular beam epitaxy

“…Investigations of As and P incorporation in GaAsP/GaAs strained layer superlattices have determined that group-V incorporation characteristics strongly deviate from the linear relationships predicted by Vegard's law [75]. It should be noted that a growth model for the MBE growth of GaAsP layers has been proposed by Nomura et al [76]. As with any mixed anion material, the critical issue for GaAsP growth is the control of the group-V composition, especially for high temperatures where As desorption readily occurs.…”