Composition Controlled Synthesis and Raman Analysis of Ge-Rich Si_xGe_1–x Nanowires

Abstract

Here, we report the synthesis of Si(x)Ge(1-x) nanowires with x values ranging from 0 to 0.5 using bulk nucleation and growth from larger Ga droplets. Room temperature Raman spectroscopy is shown to determine the composition of the as-synthesized Si(x)Ge(1-x) nanowires. Analysis of peak intensities observed for Ge (near 300 cm(-1)) and the Si-Ge alloy (near 400 cm(-1)) allowed accurate estimation of composition compared to that based on the absolute peak positions. The results showed that the fraction of Ge in the resulting Si(x)Ge(1-x) alloy nanowires is controlled by the vapor phase composition of Ge.

Thermal transport in epitaxial Si1−xGexalloy nanowires with varying composition and morphology

“…In particular, inplane assembled nanostructures target suitable geometry for integration on Si chips and CMOS architecture using planar microfabrication technology [16]. The composition analysis of this kind of nanostructures is usually performed by micro-Raman spectroscopy [15,[17][18][19] and energy dispersive x-ray (EDX) analysis [20,21]. Although Raman spectroscopy is a fast and non-destructive technique to characterize nanostructures, there are some limitations, such as the lateral spatial resolution of about 300 nm, which does not allow discriminating composition inhomogeneities within, e.g.…”