2016
DOI: 10.1016/j.jallcom.2016.05.065
|View full text |Cite
|
Sign up to set email alerts
|

Composition dependence of structural and optical properties of Cd1−Zn Te thick films obtained by the close-spaced sublimation

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
2
2
1

Citation Types

4
10
1

Year Published

2017
2017
2025
2025

Publication Types

Select...
6
1

Relationship

1
6

Authors

Journals

citations
Cited by 23 publications
(15 citation statements)
references
References 74 publications
4
10
1
Order By: Relevance
“…The strong A 1 (Te) and E T O (Te) modes were observed in the spectrum of CZT5 sample. The appearance of Te-related modes could be caused by local overheating of the surface due to using of green excitation with high energy and, therefore, Te-enrichment of the surface [12,33,34]. However, peaks of LO 1 (CdTe), TO 1 (CdTe), TO 2 (ZnTe) modes were not observed in the CZT5 sample spectrum, which could be caused by overlapping with an intensive peak of E T O (Te) mode.…”
Section: Resultsmentioning
confidence: 97%
See 3 more Smart Citations
“…The strong A 1 (Te) and E T O (Te) modes were observed in the spectrum of CZT5 sample. The appearance of Te-related modes could be caused by local overheating of the surface due to using of green excitation with high energy and, therefore, Te-enrichment of the surface [12,33,34]. However, peaks of LO 1 (CdTe), TO 1 (CdTe), TO 2 (ZnTe) modes were not observed in the CZT5 sample spectrum, which could be caused by overlapping with an intensive peak of E T O (Te) mode.…”
Section: Resultsmentioning
confidence: 97%
“…In Ref. [12] we determined that application of infrared laser (E = 1.579 eV) is suitable for the Raman spectra measurement of Zn-poor films (x < 0.10). At the same time, application of the red laser (E = 1.958 eV) is more preferable for films with x ranged from 0.10 to 0.60.…”
Section: Resultsmentioning
confidence: 99%
See 2 more Smart Citations
“…The appealing advantage of CZT compound is the variation of band gap by changing the zinc concentration. The optimal CZT solid solution with E g ~1.7 eV can be obtained at the chemical composition of x ~ 0.2 [7]. To achieve the best working characteristics of devices, ZnO, CZTS, and CZT films must have the single-phase structure with large coherent domain sizes (CDS) L, low levels of microdeformations ε, microstresses σ, dislocation concentrations ρ, and well-controlled elemental composition.…”
Section: Introductionmentioning
confidence: 99%