Composition-dependent nanoelectronics of amido-phenazines: non-volatile RRAM and WORM memory devices

Abstract

A metal-free three component cyclization reaction with amidation is devised for direct synthesis of DFT-designed amido-phenazine derivative bearing noncovalent gluing interactions to fabricate organic nanomaterials. Composition-dependent organic nanoelectronics for nonvolatile memory devices are discovered using mixed phenazine-stearic acid (SA) nanomaterials. We discovered simultaneous two different types of nonmagnetic and non-moisture sensitive switching resistance properties of fabricated devices utilizing mixed organic nanomaterials: (a) sample-1(8:SA = 1:3) is initially off, turning on at a threshold, but it does not turn off again with the application of any voltage, and (b) sample-2 (8:SA = 3:1) is initially off, turning on at a sharp threshold and off again by reversing the polarity. No negative differential resistance is observed in either type. These samples have different device implementations: sample-1 is attractive for write-once-read-many-times memory devices, such as novel non-editable database, archival memory, electronic voting, radio frequency identification, sample-2 is useful for resistive-switching random access memory application.

Benzoselenadiazole‐Based Conjugated Molecules: Active Switching Layers with Nanofibrous Morphology for Nonvolatile Organic Resistive Memory Devices

“…This phenomenon corresponds to the ‘‘write’’ process for a memory cell. During the second positive scan (sweep 2), the device remained in the ON state which corresponds to “read” process in the memory cell . The device maintained ON state even if it is not subjected to any bias for a time‐interval.…”

“…As the device is applied a negative sweep from −1.5 to 0 V (sweep 4), the device remains in the high conductive state till it reaches a threshold voltage −1.13 V, termed as “RESET Voltage” (V reset ), where device resets or switches from ON to OFF state. The RESET phenomenon corresponds to “erase” process in the memory cell . This write‐read‐erase switching with non‐volatile behaviour corresponds to flash memory characteristics .…”

Effect of Functional Group on Electrical Switching Behaviour of an Imidazole Derivative in Langmuir‐Blodgett Film

“…Organic electronics deals with various interesting organic materials and the innovative organic nanomaterials exhibit a variety of important properties such as optical, electrical, photoelectrical conducting, semiconducting, memory, storage and magnetic properties . In addition, several organic materials have been used as the principle component to design various electronic and optoelectronic devices, such as diodes, sensors, organic light‐emitting diodes (OLED), organic field effect transistors (OFET), solar cells, lasers, detectors, memory‐switching devices, logic gates etc . Nowadays, molecular electronics has emerged as an important technology.…”

Minute Organic Memory Fabricated by Laser Scanning and Selective Metal‐Vapor Deposition of a Diarylethene–Cu Composite Film

“…It is hard to obtain such a precision mask that can produce micron-level metal patterns; the smallest memory cells that have been obtained so far are around 100 µm. In actual organic memory devices reported so far, the level fluctuation is very large, [3,26,[29][30][31][32][33] and it is difficult to obtain enough SNR to achieve multilevel recording. [24][25][26][27][28] Multilevel recording requires a stable and distinct multilevel between the highest and lowest recording levels and a high signal-to-noise ratio (SNR); in other words, a large difference between the highest and lowest levels, and a small fluctuation in each level.…”

“…More density by multilevel recording requires much larger SNR. In actual organic memory devices reported so far, the level fluctuation is very large, and it is difficult to obtain enough SNR to achieve multilevel recording. On the other hand, a half‐size memory cell with the same SNR easily achieves four‐times density.…”