Composition modulation in liquid phase epitaxial InxGa1−xAsyP1−y layers lattice matched to InP substrates

Hénoc, P.; Izraël, A.; Quillec, M.; Launois, H.

doi:10.1063/1.92968

Cited by 188 publications

(54 citation statements)

References 2 publications

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“…Actually, compositional modulation in LPE-grown InGaAsP films 9,10 occurred precisely in the temperature range predicted by the spinodal decomposition diagram calculated by Cremoux et al 23 However, these predicted critical temperatures for the spinodal decomposition are found to be much lower than the typical substrate temperatures for growth techniques working away from thermodynamic equilibrium such as MBE. 13 Additionally, bulk diffusion is expected to be negligible.…”

Section: Introductionmentioning

confidence: 90%

“…8 Compositional modulation has been first observed for InGaAsP semiconductor alloys grown by liquid phase epitaxy ͑LPE͒. 9,10 However, this bulk phenomenon is not limited to quaternary alloys or to the LPE growth technique. Several works have reported compositional modulation on other semiconductor alloys such as CVD-grown SiGe, 11 MBE-grown InGaAs 12,13 and, more recently, for the InGaP/GaAs system grown by the chemical beam epitaxy ͑CBE͒.…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Compositional modulation and surface stability in InGaP films: Understanding and controlling surface properties

Bortoleto

Gutiérrez

Cotta

et al. 2007

Journal of Applied Physics

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We investigate the formation of compositional modulation and atomic ordering in InGaP films. Such bulk properties-as well as surface morphologies-present a strong dependence on growth parameters, mainly the V/III ratio. Our results indicate the importance of surface diffusion and, particularly, surface reconstruction for these processes. Most importantly from the application point of view, we show that the compositional modulation is not necessarily coupled to the surface instabilities, so that smooth InGaP films with periodic compositional variation could be obtained. This opens a new route for the generation of templates for quantum dot positioning and three-dimensional arrays of nanostructures.

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Section: Introductionmentioning

confidence: 90%

Section: Introductionmentioning

confidence: 99%

Compositional modulation and surface stability in InGaP films: Understanding and controlling surface properties

Bortoleto

Gutiérrez

Cotta

et al. 2007

Journal of Applied Physics

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“…4@)), with surface tilt implies that surface structure has a significant effect on the phase stability of the epitaxial layers. The study of Henoc et aL [13] on Ini-,Ga, As,Pi, layers, grown on (001) InP substrates by use of LPE, indicates the presence of two types of contrast modulations in TEM. fine-scale speckle microstructure and coarser scale contrast modulations with wavelengths of 10 and 125 nm, respectively.…”

Section: Discussionmentioning

confidence: 99%

Phase stability in Ga{sub x}In{sub 1{minus}x}As{sub y}Sb{sub 1{minus}y}/GaSb heterostructures

Chen¹,

Bucklen²,

Rajan³

et al. 1998

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The crystallographic and microstructural characteristics of liquid phase epitaq lattice-matched In,Ga(l-,,As,Sb(l-,,/GaSb (100) heterostructures is presented. Using both transmission electron microscopy and high resolution X-ray diffraction, a variety of diffusional based phase transformations in the epitaxial f h s are observed, including. spinodal decomposition, compositional modulations of the order of 30 nm, and weak long range ordering. These results are interpreted in terms of the possible influence of substrate surface structure on the phase stability of epitaxial layers.

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“…2~ The coherency strain energy, E c, of the system induced only by lattice eigenstrain, e L, without applied stress (aA = 0) is given by 1 ~ ~,~Ldr [14] E~=~ where <r "~ is the eigenstress in the absence of ~.…”

Section: Ae = -Oae Ndr -~ ~Aetdr -mentioning

confidence: 99%

Influences of Interfacial Misfit Stress on Modulated Microstructures of InGaAsP / InP Heterostructures

Lee

Kim

Tsakalakos

1995

J. Electrochem. Soc.

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The misfit stresses of metallorganic chemical vapor deposition grown InGaAsP/InP heterostructure wafers were determined and their effects on the modulated mierostructures of InGaAsP epilayer were investigated. Lattice mismatches were measured using {511} asymmetric and (400) symmetric x-ray reflections. Elastic strains were obtained from the parallel mismatches and were used for determining the misfit stresses. Transmission electron microscopy results showed the presence of the modulated mierostructures (spinodal decomposition) in the epilayer. It was found that the modulation periodicity varies with the lattice mismatches. To investigate this observation, the interaction elastic energy induced by misfit stress was derived and used to explain the experimental results. Good agreement was obtained between the measured and calculated modulation wavelength. Also, contributions from the composition and misfit stress to variation of modulation periodicity were separated out, and the misfit stress was found to have the larger contribution. Thus, it is concluded that the interfaeial coherency and misfit stress have large influences on the mierostructures of the InGaAsP epilayer, particularly on the modulation wavelength.There has been extensive interest in In~ xGaxASyPl_y quaternary epitaxial layers lattice matched to InP substrate. Such heterostructures are of significance for various devices such as laser diodes, light-emitting diodes, and photodiodes. This system is important because energies of the direct bandgap cover the range where the optical losses in silica-based optical fibers reach a minimum. 1 One main requirement in the fabrication of perfect heterostruetures is the maintenance of coherency of the interface between the epilayer and the substrate. When the lattice is mismatched, misfit stress is developed. Lattice mismatch and misfit stress have been shown to have a large influence on physical properties such as photoluminescence (PL) and electrical properties of these devices. ~ It is well accepted that a miscibility gap exists in the InGaAsP/InP system. 3 Since the first report of immiscibility of this system, the observation and the interpretation of phase separation in this alloy have been interesting and controversial subjects. Attention has been focused mainly on comprehension of the origin of this phenomenon 4-6 and on its resulting effects on the optoeleetronic and structural properties] Little attention, however, has been paid to the influence of stress field on the microstruetures of this alloy. Since the misfit stress is always present in compound semiconductor multilayered systems, it is fun damentally significant to understand its effects on the microstructure, especially on the composition modulation wavelength. The most noteworthy study made on the influence of misfit stress on the mierostructure is the substrate-indueed stabilization theory developed by deCremoux. ~ This theory, however, has been used only to justify the existence of modulated structures, and is not expected to yield...

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Composition modulation in liquid phase epitaxial InxGa1−xAsyP1−y layers lattice matched to InP substrates

Cited by 188 publications

References 2 publications

Compositional modulation and surface stability in InGaP films: Understanding and controlling surface properties

Compositional modulation and surface stability in InGaP films: Understanding and controlling surface properties

Phase stability in Ga{sub x}In{sub 1{minus}x}As{sub y}Sb{sub 1{minus}y}/GaSb heterostructures

Influences of Interfacial Misfit Stress on Modulated Microstructures of InGaAsP / InP Heterostructures

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