Composition-tuned band gap energy and refractive index in GaSxSe1−x layered mixed crystals

Aerosol-assisted chemical vapor deposition of MSe and MSSe thin films using zinc(ii) and cadmium(ii) single source precursors containing hybrid Se,X-PNC ligands

“…S3, ESI †). 82 51,83 and comparable to those of analogous previously reported films (Table S2 and references therein, ESI †). 6,22,45,[84][85][86][87][88][89] As expected, E g values of ternary thin films, 3F and 5F, were slightly higher than those of bulk MSe band gaps due to partial substitution of Se 2À with S 2À anions in the lattice.…”

“…S3, ESI†). 82 E g values for as-deposited thin films were 2.87 ( 3F ), 2.93 ( 3Fb ), 2.71 ( 4F ), 2.74 ( 4Fb ), 1.77 ( 5F ), 1.80 ( 5Fb ), 1.74 ( 6F ) and 1.76 ( 6Fb ) eV, whereas E g values for annealed films were 2.67 ( 3Fa ), 2.68 ( 4Fa ), 1.71 ( 5Fa ) and 1.69 ( 6Fa ) eV. The estimated E g values were close to those of the corresponding bulk band edge of WZ-MSe (1.74 eV M = Cd and 2.7 eV M = Zn) 51,83 and comparable to those of analogous previously reported films (Table S2 and references therein, ESI†).…”

Monotonous alloying-driven band edge emission in two-dimensional hexagonal GaSe1−xTex semiconductors for visible to near-infrared photodetection

“…29 On the other hand, M. Isik et al demonstrated a quadratic dependence of bandgap on Se composition in GaS x Se 1Àx (B4.5% mismatch), where a small band bowing parameter of B0.046 eV was exploited for the full range alloy composition. 30 For a GaSe 1Àx Te x ternary alloy with a relatively large lattice mismatch of B7.5% between the parental, the band bowing behavior of the GaSe 1Àx Te x layers is notably deviated from the linear relationship as usual. 15,16 That is because of the unavoidable and extremely complex structural transition from isotropic hexagonal-GaSe to anisotropic monoclinic-GaTe phase at x ranging from B0.5 to B0.7.…”

Nano-Structural Characteristics and Optical and Electrical Properties of Obliquely Deposited Manganese Oxide Thin Films

“…Hence, electron just absorb a photon for exciting, but at the indirect bandgap, electron needs to absorb phonon in addition to the photon. The bandgap of the MnO graded helical square tower-like (terraced) sculptured (GHSTTS) thin film was calculated by two approaches: (i) Tauc method and (ii) [44,45], and photoluminescence spectrum. In first approach, equation ( 8) was used for calculating absorption coeff relationship between α is and Eg.…”