Composition-tuned PbS<i>x</i>Se1−<i>x</i> Schottky-barrier infrared detectors

Schoolar, R. B.; Jensen, J. D.; Black, G. M.

doi:10.1063/1.89773

Cited by 41 publications

(4 citation statements)

References 5 publications

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“…However, changing the contact metal from gold to calcium (|Δϕ m | = 2.3 eV) results in only a 0.15 V increase in V OC , which suggests that the surface Fermi level is pinned and the barrier height is relatively independent of the metal. Schottky barrier formation is often due to defects formed at an interface by deposition of a metal . Direct evidence for the Schottky junction was obtained by capacitance−voltage ( C − V ) measurements on complete cells …”

Section: Applications: Quantum Dot Solar Cellsmentioning

confidence: 99%

“…Schottky barrier formation is often due to defects formed at an interface by deposition of a metal. 221 Direct evidence for the Schottky junction was obtained by capacitance-voltage (C-V) measurements on complete cells. 219 The location of the Schottky junction was determined by comparing the EQE spectra from cells of different thickness.…”

Section: Schottky Junction and P-n Junction Solar Cells Based On Film...mentioning

confidence: 99%

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Semiconductor Quantum Dots and Quantum Dot Arrays and Applications of Multiple Exciton Generation to Third-Generation Photovoltaic Solar Cells

et al. 2010

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Introduction 6873 2. Synthesis of Colloidal Quantum Dots 6874 2.1. Solution Synthesis 6874 2.2. III-V Quantum Dots Grown via Vapor Phase Deposition 6877 3. Relaxation Dynamics of Photogenerated Carriers In QDs 6877 3.1. Experimental Determination of Relaxation/ Cooling Dynamics and a Phonon Bottleneck in Quantum Dots 6878 4. Multiple Exciton Generation (MEG) in Quantum Dots 6878 4.1. MEG in Si QDs 6880 5. Quantum Dot Arrays 6881 5.1. MEG in PbSe QD Arrays 6882 6. Applications: Quantum Dot Solar Cells 6884 6.1. Quantum Dot Solar Cell Configurations 6885 6.1.1. Photoelectrodes Composed of Quantum Dot Arrays 6885 6.1.2. Quantum Dot-Sensitized Nanocrystalline TiO 2 Solar Cells 6885 6.1.3. Quantum Dots Dispersed in Organic Semiconductor Polymer Matrices 6885 6.2. Schottky Junction and p-n Junction Solar Cells Based on Films of QD Arrays 6886 7. Conclusion 6887 8. Acknowledgments 6887 9. Note Added after ASAP Publication 6887 10. References 6887

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Section: Applications: Quantum Dot Solar Cellsmentioning

confidence: 99%

Section: Schottky Junction and P-n Junction Solar Cells Based On Film...mentioning

confidence: 99%

Semiconductor Quantum Dots and Quantum Dot Arrays and Applications of Multiple Exciton Generation to Third-Generation Photovoltaic Solar Cells

et al. 2010

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“…However, changing the contact metal from gold to calcium (|Δϕ m | = 2.3 eV) results in only a 0.15 V increase in V OC , which suggests that the surface Fermi level is pinned and the barrier height is relatively independent of the metal. Schottky barrier formation is often caused by defects formed at an interface by deposition of a metal, and this could easily be the case here. We note also that devices with gold top contacts do not switch polarity (that is, gold does not become the positive electrode) despite the fact that the work function of gold is substantially larger than that of ITO.…”

mentioning

confidence: 99%

Schottky Solar Cells Based on Colloidal Nanocrystal Films

et al. 2008

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We describe here a simple, all-inorganic metal/NC/metal sandwich photovoltaic (PV) cell that produces an exceptionally large short-circuit photocurrent (>21 mA cm -2 ) by way of a Schottky junction at the negative electrode. The PV cell consists of a PbSe NC film, deposited via layer-by-layer (LbL) dip coating that yields an EQE of 55-65% in the visible and up to 25% in the infrared region of the solar spectrum, with a spectrally corrected AM1.5G power conversion efficiency of 2.1%. This NC device produces one of the largest short-circuit currents of any nanostructured solar cell, without the need for sintering, superlattice order or separate phases for electron and hole transport. Figure 1 shows the structure, current-voltage performance, EQE spectrum, and proposed band diagram of our device. Device fabrication consists of depositing a 60-300 nm-thick film of monodisperse, spheroidal PbSe NCs onto patterned indium tin oxide (ITO) coated glass using a layer-by-layer dip coating method, followed by evaporation of a top metal contact. In this LbL method, 1 a layer of NCs is deposited onto the ITO surface by dip coating from a hexane solution and then washed in 0.01 M 1,2-ethanedithiol (EDT) in acetonitrile to remove the electrically insulating oleate ligands that originally solubilize the NCs (see Supporting Information). Large-area, crack-free and mildly conductive (σ ) 5 × 10 -5 S cm -1 ) NC films result. The NCs pack randomly in the films, are partially coated in adsorbed ethanedithiolate, and show p-type conductivity under illumination. 1 X-ray diffraction and optical absorption spectroscopy established that the NCs neither ripen nor sinter in response to EDT exposure. We have found that using methylamine instead of EDT yields similar device performance (Supporting Information, Figure 1). 2 We have also fabricated working devices from PbS and CdSe NCs (Supporting Information, Figures 2 and 3), which indicates that the approach adopted here is not restricted to EDT-treated PbSe NCs and that it should be possible to improve cell efficiency by engineering the surface of the NCs to attain longer carrier diffusion lengths and higher photovoltages through surface state passivation and prevention of Fermi level pinning.When tested in nitrogen ambient under simulated 1-sun test conditions (100 ( 5 mW cm -2 ELH white light illumination), EDT-treated PbSe devices exhibit large shortcircuit photocurrent densities (J SC ) and modest open-circuit voltages (V OC ) and fill factors (FF), with one of the most efficient devices yielding J SC ) 24.5 mA cm -2 , V OC ) 239 mV, FF ) 0.41 and a mismatch-corrected 3 AM1.5G efficiency of 2.1% (Figure 1a; see Supporting Information regarding spectral mismatch). The mismatch-corrected J SC values of these devices are reproducibly larger than those of other nanostructured solar cells, including the best organic 4 and dye-sensitized devices, 5 which is remarkable considering the unsintered, glassy microstructure of our NC films and the fact that the NCs retain quantum confinement...

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“…Thin films of Pb 0.8 Sn 0.2 Te have high prospects for applications in many fields such as infrared (IR) detectors, optoelectronics [1][2][3][4] and as a thermoelectric material [5]. The number of investigations carried out to understand the electrical conduction mechanism in thin films of this material are few [6][7][8][9][10][11][12].…”

Section: Introductionmentioning

confidence: 99%

Effect of oxygen adsorption on the electrical resistance of thin films

Bahulayan¹,

Das²

1996

Semicond. Sci. Technol.

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Thin films of Pb 0.8 Sn 0.2 Te of varying thicknesses deposited by the flash evaporation method showed considerable change in resistance with time when exposed to oxygen or atmosphere. The change in resistance is found to decrease with increase in thickness and with increase in substrate temperature. The observed behaviour is explained by an oxygen adsorption model, which is further supported by the x-ray photoelectron spectroscopy (XPS) of the films.

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Composition-tuned PbSxSe1−x Schottky-barrier infrared detectors

Cited by 41 publications

References 5 publications

Semiconductor Quantum Dots and Quantum Dot Arrays and Applications of Multiple Exciton Generation to Third-Generation Photovoltaic Solar Cells

Semiconductor Quantum Dots and Quantum Dot Arrays and Applications of Multiple Exciton Generation to Third-Generation Photovoltaic Solar Cells

Schottky Solar Cells Based on Colloidal Nanocrystal Films

Effect of oxygen adsorption on the electrical resistance of thin films

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