Composition, XRD and morphology study of laser prepared LiNbO3 films

Jelı́nek, M.; Havránek, V.; Remsa, Jan; Kocourek, T.; Vincze, Á.; Bruncko, Jaroslav; Studnička, V.; Rubešová, K.

doi:10.1007/s00339-012-7191-0

Cited by 12 publications

(12 citation statements)

References 9 publications

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“…LiNbO 3 thin films were prepared by PLD, using KrF excimer laser deposition (wavelength λ = 248 nm), with the goal of fabricating layers for planar waveguides [6,7]. The films of thickness of about 680 nm were grown on SiO 2 /Si substrates at substrate temperatures, T S , of 650, 700 and 750 • C. The films were prepared under the following conditions: energy density 2 J cm −2 , oxygen pressure 30 Pa, laser frequency 10 Hz.…”

Section: Methodsmentioning

confidence: 99%

Polycrystalline LiNbO₃thin films characterized by infrared and Raman spectroscopy

et al. 2014

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Thin films of lithium niobate (LiNbO 3 ) were studied by Fourier transform infrared and micro-Raman spectroscopy. The films were prepared on SiO 2 /Si substrate at substrate temperatures of 650, 700 and 750 • C from monocrystalline or sintered LiNbO 3 targets, using KrF excimer laser ablation. The films were polycrystalline. The changes of film properties and E and A 1 phonon spectra with deposition conditions were studied, and were compared with bulk data.

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Section: Methodsmentioning

confidence: 99%

Polycrystalline LiNbO₃thin films characterized by infrared and Raman spectroscopy

et al. 2014

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“…Moreover, the Li concentration in their films decreased with the increase of the deposition pressure and partial oxygen pressure. The composition of films deposited by PLD and sputtering was highly dependent also on the target quality (single crystal, sintered ceramics, or pressed powder) . Furthermore, the phase composition was dependent on the substrate and its orientation .…”

Section: Growth Of Linbo3 and Litao3 Films By Chemical And Physical Mmentioning

confidence: 99%

Toward High‐Quality Epitaxial LiNbO₃ and LiTaO₃ Thin Films for Acoustic and Optical Applications

Bartasyte

Margueron

Baron

et al. 2017

Adv Materials Inter

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In 1928, Zachariasen discovered the LiNbO 3 phase. [1] The first single crystals were grown using the flux method by Matthias Over the past five decades, LiNbO 3 and LiTaO 3 single crystals and thin films have been studied intensively for their exceptional acoustic, electro-optical, and pyroelectric and ferroelectric properties. Today, LiNbO 3 single crystals in electro-optics are equivalent to silicon in electronics, and about 70% of radio-frequency (RF) filters, based on surface acoustic waves, are fabricated on these single crystals. These materials in the form of thin films are needed urgently for the development of the next-generation of high-frequency and/or wide-band RF filters or tuneable frequency filters adapted to the fifth generation of infrastructures/networks/communications. The integration of LiNbO 3 films in guided nanophotonic devices will allow higher operational frequencies, wider bandwidth, and miniaturized optical devices in line with improved electronic conversion. Here, the challenges and the achievements in the epitaxial growth of LiTaO 3 and LiNbO 3 thin films and their integration with silicon technology and to acoustic and guided nanophotonic devices are discussed in detail. The systematic representation and classification of all epitaxial relationships reported in the literature have been carried out in order to help the prediction of the epitaxial orientations in the new heterostructures. Future prospects of potential applications and the expected performances of thin film devices are overviewed, as well.Figure 2. Schematic representation of the layer transfer process by the ion slicing technique consisting of a) ion implantation, b) wafer bonding, c) laser irradiation or heating in order to obtain d) a single crystalline layer on the host (Si) substrate. Reproduced with permission. [53]Figure 3. a,b) Electron microscopy images and c) schematic diagram of a microresonator based on LiNbO 3 film on Si and fabricated by the layer transfer technique. Reproduced with permission. [53]The first reports on the growth of c-axis-oriented LN films by liquid phase epitaxy on an LT substrate and by RF sputtering Adv. Mater. Interfaces 2017, 4, 1600998 www.advmatinterfaces.de www.advancedsciencenews.com Figure 6. Frequency response of a) HBAR and b) FBAR based on thinned X-cut LiNbO 3 layer on Si. Schematic representations of a) HBAR and b) FBAR structures are given in the insets. Reproduced with permission. [78]

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“…1,2) Moreover, LN is a piezoelectric material that has been extensively used as the substrate for surface acoustic wave (SAW) devices. [3][4][5][6] Although LN has intriguing optical and piezoelectric properties, the generally used LN-based devices are fabricated on LN single-crystal wafers, because the deposition of highquality LN thin films is still a challenging task, [7][8][9][10][11][12][13] which hampers the integration of LN-based devices with other functionalities.…”

Section: Introductionmentioning

confidence: 99%

“…More importantly, LN is strongly anisotropic and LN crystals with special orientations are often used for different applications, for example, Z-cut LN for optical devices, 14,15) Y128-cut for surface acoustic wave devices, 16) and Y36-cut for bulk acoustic wave devices. 5,17,18) However, only a c-axispreferred orientation corresponding to the Z-cut crystal orientation can be achieved by thin-film deposition techniques, [7][8][9][10][11][12][13][19][20][21][22] which does not fulfill the requirements of diverse device applications.…”

Section: Introductionmentioning

confidence: 99%

Fabrication of Y128- and Y36-cut lithium niobate single-crystalline thin films by crystal-ion-slicing technique

Shuai

Gong

Bai

et al. 2018

Jpn. J. Appl. Phys.

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Y128- and Y36-cut single-crystalline lithium niobate (LN) thin films are fabricated by the crystal-ion-slicing (CIS) technique onto LN substrates. The conditions for the successful exfoliation of submicron-thick LN thin films are independent of the wafer orientation used in the present work. Wafer bonding using benzocyclobutene (BCB) is adopted to transfer LN thin films onto substrates, instead of the generally used hydrophilic bonding, which does not need a strict surface polishing process before the bonding. A noncontact polishing method involving low-energy Ar+ irradiation is adopted to treat the sliced LN thin films. The atomic force microscopy result shows that the surface roughness of the LN thin film is reduced from 10.6 to 6.4 nm.

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Composition, XRD and morphology study of laser prepared LiNbO3 films

Cited by 12 publications

References 9 publications

Polycrystalline LiNbO₃thin films characterized by infrared and Raman spectroscopy

Polycrystalline LiNbO₃thin films characterized by infrared and Raman spectroscopy

Toward High‐Quality Epitaxial LiNbO₃ and LiTaO₃ Thin Films for Acoustic and Optical Applications

Fabrication of Y128- and Y36-cut lithium niobate single-crystalline thin films by crystal-ion-slicing technique

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Composition, XRD and morphology study of laser prepared LiNbO3 films

Cited by 12 publications

References 9 publications

Polycrystalline LiNbO3thin films characterized by infrared and Raman spectroscopy

Polycrystalline LiNbO3thin films characterized by infrared and Raman spectroscopy

Toward High‐Quality Epitaxial LiNbO3 and LiTaO3 Thin Films for Acoustic and Optical Applications

Fabrication of Y128- and Y36-cut lithium niobate single-crystalline thin films by crystal-ion-slicing technique

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Polycrystalline LiNbO₃thin films characterized by infrared and Raman spectroscopy

Polycrystalline LiNbO₃thin films characterized by infrared and Raman spectroscopy

Toward High‐Quality Epitaxial LiNbO₃ and LiTaO₃ Thin Films for Acoustic and Optical Applications