INTRODUCTIONTransparent conductive oxide (TCO) films such as In 2 O 3 , SnO 2 , and ZnO have received considerable attention due to their great technological importance in electronic and optoelectronic applications. 1À4 The structural, optical, and electrical characteristics of these TCO films depend on the film preparation methods and different postdeposition treatments. Furthermore, a major influence on the physical and electrical properties of these films is the film doping with different chemical elements. 5,6 The film properties can be improved or modified by controlling the doping level, which are used in many different applications. Thus, there is actually a great interest in the study of the correlation between the properties of TCO films and the concentration of doping elements.Zinc oxide (ZnO) is a well-known TCO semiconductor because of its attractive properties such as a wide direct band gap (3.37 eV), high transparence in visible and near-ultraviolet spectral regions, low electrical resistivity, high piezoelectric constants, and high chemical and thermal stability. 7À9 Moreover, these optical and electrical properties can be affected greatly by chemical doping with the group III elements of the periodic table. 10,11 Recent research has demonstrated that Al-, In-, and Ga-doped ZnO thin films are promising TCOs for advanced applications such as displays, electrochromic devices, etc. 12À14 On the basis of nontoxicity, low cost, and abundant raw materials, Al-doped ZnO (AZO) thin film is emerging as an alternative potential candidate to Sn-doped In 2 O 3 (ITO) thin film, which is the most important TCO material in practical applications nowadays. 2,15,16 AZO film shows remarkable electrical conductivity together with high charge density and mobility due to the spatially organized ZnO doped with Al 3þ .Various deposition techniques such as magnetron sputtering, pulsed laser deposition, chemical vapor deposition, spray pyrolysis,